Formation method of semiconductor structure

Abstract

A method for forming a semiconductor structure comprises the steps that a substrate is provided, the substrate comprises a gate cutting area and device areas located on the two sides of the gate cutting area, gate structures are formed on the portions, in the gate cutting area and the device areas, of the substrate, and the tops of the gate structures are provided with etching mask layers; removing the etching mask layer at the top of the gate structure on the gate cutting region and the device region; forming a gate structure on the substrate in the gate cutting region and the device region; forming a dielectric layer covering the side wall of the gate structure on the substrate of the gate cutting region and the device region; forming a hard mask layer covering the dielectric layer and the gate structure; etching the hard mask layer until the top of the gate structure on the gate cutting region is exposed; and removing the gate structure and the dielectric layer on the gate cutting region, and forming corresponding segmentation grooves on the gate cutting region, so that the gate structures on different device regions are segmented by the segmentation grooves. According to the scheme, the quality of the formed semiconductor structure can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, as the density and integration of semiconductor devices increase, the feature size of planar transistors is also getting smaller and smaller. [0003] In order to better adapt to the reduction of feature size, the semiconductor process gradually begins to transition from planar transistors to three-dimensional transistors with higher power efficiency, such as Fin Field Effect Transistors (FinFETs). The fin field effect transistor can improve the integration of semiconductor devices, and the gate structure of the fin field effect ...

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Problems solved by technology

[0004] However, existing semiconductor structures still suffer from poor performance

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