Method of forming semiconductor device

Abstract

The invention discloses a semiconductor device forming method. The method comprises steps: a semiconductor substrate is provided, wherein fin parts and an isolation structure are arranged on the semiconductor substrate, and the isolation structure covers part of the side walls of the fin parts; a precursor layer is formed on the surfaces of the isolation structure and the fin parts; the precursorlayer is oxidized to form a pseudo-gate dielectric material layer; a pseudo-gate electrode material layer is formed on the pseudo-gate dielectric material layer; the pseudo-gate electrode material layer and the pseudo-gate dielectric material layer are patterned to form a pseudo-gate dielectric layer and a pseudo-gate electrode layer located on the pseudo-gate dielectric layer, wherein the pseudo-gate dielectric layer is located on the surface of the isolation structure and covers the top surfaces and the side wall surfaces of part of the fin parts; an interlayer dielectric layer which coversthe side walls of the pseudo-gate dielectric layer and the pseudo-gate electrode layer is formed on the isolation structure and the fin parts; and the pseudo-gate electrode layer and the pseudo-gate dielectric layer are removed. The semiconductor device forming method can reduce the degree of damages to the isolation structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistor is one of the most important elements in modern integrated circuits. The basic structure of MOS transistors includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes : a gate dielectric layer on the surface of the semiconductor substrate and a gate electrode layer on the surface of the gate dielectric layer; source and drain doped regions in the semiconductor substrate on both sides of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, wh...

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Problems solved by technology

[0004] However, the performance of semiconductor devices formed by fin field effect transistors in the prior art needs to be improved

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