Susceptor bias adjustment device, semiconductor processing equipment, and film manufacturing method

Abstract

The invention provides a base bias adjustment device, semiconductor processing equipment and a film manufacturing method, the device includes a positive bias adjustment unit, a negative bias adjustment unit and a switch, wherein the first end of the positive bias adjustment unit is grounded , the second end is connected to the base, used to make the base generate a positive bias, and can adjust the size of the positive bias; the first end of the negative bias adjustment unit is grounded, and the second end is connected to the base, used to make The base generates a negative bias voltage and can adjust the magnitude of the negative bias voltage; the transfer switch is used to selectively connect the positive bias voltage adjustment unit or the negative bias voltage adjustment unit to the base. The base bias adjustment device provided by the present invention can meet the requirements of different processes or different stages of the same process, thereby expanding the process window.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a base bias adjustment device, semiconductor processing equipment and a thin film manufacturing method. Background technique [0002] In the integrated circuit manufacturing process, the physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) method has the advantages of film consistency, better uniformity, wider process window, and the ability to fill via holes with a high aspect ratio. It is widely used to deposit many different metal layers, hard masks and other related material layers. The pedestal bias is one of the significant windows to tune the stress and density of the film. [0003] figure 1 It is a structural diagram of an existing PVD device. see figure 1 , the PVD equipment includes a reaction chamber 1, a target 2 is arranged on the top of the reaction chamber 1, the target 2 is electrically connected to a radio ...

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Problems solved by technology

[0004] However, since the above-mentioned RF power supply 5 can only load a negative bias voltage to the susceptor 3, the wafer may be damaged in some processes, resulting in an excessively high VF value of the wafer, resulting in unqualified process results. Therefore, the process window of the PVD equipment Small, unable to meet the needs of different processes

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