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Double-gate nonvolatile charge trap memory and preparation method thereof

A charge trap, memory technology, applied in the field of memory, can solve problems such as limiting multi-functional applications

Inactive Publication Date: 2019-05-24
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Conventional charge-trap memory devices usually work with fixed channel carrier polarity and device characteristics, limiting their multifunctional applications

Method used

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  • Double-gate nonvolatile charge trap memory and preparation method thereof
  • Double-gate nonvolatile charge trap memory and preparation method thereof
  • Double-gate nonvolatile charge trap memory and preparation method thereof

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Embodiment Construction

[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals represent the same or similar materials or methods having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. To simplify the disclosure of the present invention, the materials and methods of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art may recognize the applicability of other processes and / or the use of other materials.

[0032] Hereinafter, according to the accompanying drawings, an example will be given to illustrate the preparation method of the bipolar t...

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Abstract

The invention belongs to the technical field of memories and specifically relates to constructing a double-gate structure nonvolatile charge trap memory based on a bipolar two-dimensional material. The bipolar two-dimensional material is used as a channel material, and a double-gate structure is configured to regulate the polarity of channel carriers to realize a dynamically configurable multi-level cell memory. The preparation process comprises firstly obtaining the bipolar two-dimensional material as a channel by physical mechanical peeling or chemical vapor deposition on a substrate; growing a top gate dielectric layer as a charge trapping layer and a charge blocking layer by using atomic layer deposition; and forming a specific metal electrode by a photolithography process. The methodrealizes the dynamically configurable multi-level cell memory by double gate voltage regulation. The dynamically configurable multi-level cell memory is no longer limited by the fixed device characteristic working mode of a traditional charge trap memory, and has broad application prospect in the new fields of data storage and neural morphology calculation in the future.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a double-gate structure nonvolatile charge trap memory based on a bipolar two-dimensional material and a preparation method thereof. Background technique [0002] Semiconductor memory is one of the key components of modern electronic technology, which promotes the digitalization and informationization of modern society. According to the length of time it saves data, it can be roughly divided into volatile memory and non-volatile memory. Non-volatile memory has the characteristics of long data retention time, no power loss and low power consumption. Nonvolatile charge trap memory is a popular solid-state memory technology because of its excellent data storage performance and device scalability. Non-volatile charge-trap memories play an important role in modern electronics, from portable electronic systems to large data centers. Conventional charge-trap memory devices...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568H01L29/78H10B43/30
Inventor 张卫熊妍王水源周鹏
Owner FUDAN UNIV
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