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Heterogeneous semiconductor structure and manufacturing method thereof

A semiconductor and heterogeneous technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as limiting integration density

Active Publication Date: 2019-05-24
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The power consumption of such photonic devices limits their achievable integration densities

Method used

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  • Heterogeneous semiconductor structure and manufacturing method thereof
  • Heterogeneous semiconductor structure and manufacturing method thereof
  • Heterogeneous semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0047] The detailed description set forth below in connection with the accompanying drawings is intended as a description of exemplary embodiments of heterogeneous integrated circuits for short wavelengths provided in accordance with the present invention and is not intended to represent the only forms in which the present invention may be constructed or utilized. This description clarifies the features of the invention in conjunction with the illustrated embodiments. It will be understood, however, that the same or equivalent functions and structures can be achieved by different embodiments, and such different embodiments are also intended to be encompassed within the spirit and scope of the present invention. As indicated elsewhere herein, like element numbers are intended to refer to like elements or features.

[0048] In photonic integrated circuits, the size of optical waveguides and active components can be scaled to the operating wavelength, for example, smaller compone...

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Abstract

A heterogeneous semiconductor structure, including a first integrated circuit and a second integrated circuit, the second integrated circuit being a photonic integrated circuit. The heterogeneous semiconductor structure may be fabricated by bonding a multi-layer source die, in a flip-chip manner, to the first integrated circuit, removing the substrate of the source die, and fabricating one or morecomponents on the source die, using etch and / or deposition processes, to form the second integrated circuit. The second integrated circuit may include components fabricated from cubic phase gallium nitride compounds, and configured to operate at wavelengths shorter than 450 nm.

Description

technical field [0001] One or more aspects of embodiments according to the present invention relate to integrated circuits, and more particularly, to heterogeneous integrated circuits that combine optical and electrical functions. Background technique [0002] Over the past two decades, researchers have developed photonic equivalents of transistors and have even been able to build all-optical logic circuits. These devices can even be fabricated much faster than existing silicon transistor equivalents. However, the power requirements of photonic devices and their size are currently many orders of magnitude higher than transistor equivalents. The power consumption of such photonic devices limits their achievable integration densities. [0003] Accordingly, there is a need for improved integrated circuit structures that provide optical functionality. Contents of the invention [0004] Aspects of embodiments of the present disclosure relate to a heterogeneous semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144H01L21/683H01L31/0352H01L31/103H01L23/488
CPCG02B6/136G02B6/12004G02B2006/12078H01L27/142H01L31/10H01L31/02327H01L31/03048H01L31/035218H01L31/02366H01L31/1856H01L31/035209
Inventor D.卡罗瑟斯
Owner SAMSUNG ELECTRONICS CO LTD