Structure and formation method of semiconductor device with capacitors

Abstract

A semiconductor device structure with capacitors and a formation method thereof are provided. The semiconductor device structure includes a semiconductor substrate and a first capacitor and a second capacitor over the semiconductor substrate. The first capacitor has a first capacitor dielectric layer, and the second capacitor has a second capacitor dielectric layer. The first capacitor dielectriclayer is between the second capacitor dielectric layer and the semiconductor substrate. The first capacitor and the second capacitor are electrically connected in parallel. The first capacitor has a first linear temperature coefficient and a first quadratic voltage coefficient. The second capacitor has a second linear temperature coefficient and a second quadratic voltage coefficient. One or bothof a first ratio of the first linear temperature coefficient to the second linear temperature coefficient and a second ratio of the first quadratic voltage coefficient to the second quadratic voltagecoefficient is negative.

Description

technical field [0001] Embodiments of the present invention relate to structures and methods of forming semiconductor devices having capacitors. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs. Each generation has smaller and more complex circuits than the previous generation. [0003] During IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally provides many benefits by increasing production efficiency and reducing associated costs. [0004] However, these advances have increased the complexity of handling and manufacturing ICs. As component sizes continue to decrease, manufacturing processes continue to bec...

AI Technical Summary

Problems solved by technology

[0004] However, these advances have increased the complexity of handling and manufacturing IC

Manufacturing processes continue to become difficult as component sizes continue to decrease

Therefore, it is a challenge to form reliable semiconductor devices with smaller and smaller dimensions

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