High stability dfn packaged device

A packaging device, high stability technology, used in semiconductor devices, electric solid state devices, semiconductor/solid state device parts and other directions, can solve the problems of uneven curing, reduced thermal performance, poor fluidity of epoxy resin compositions, etc. The heat dissipation effect of the package is improved, the contact area is increased, and the effect of improving the heat dissipation effect

Active Publication Date: 2020-11-17
西安航思半导体有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the poor fluidity or uneven curing of the epoxy resin composition during the packaging process, it is easy to cause the internal gas to be not completely exhausted and produce air holes, which will lead to moisture absorption of the packaged device and lead to reliability failure, and the generation of internal air holes may also lead to heat conduction Performance degradation resulting in electrical failure or heat loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High stability dfn packaged device
  • High stability dfn packaged device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~4

[0037] Embodiments 1 to 4: A high-stability DFN packaged device, including a heat dissipation pad 1, a chip 3, and a conductive pad 4 located in an epoxy insulator 6, the chip 3 is located on the heat dissipation pad 1, and is located on the heat dissipation pad 1. Several conductive pads 4 are provided around the disk 1, and the conductive pads 4 and the chip 3 are connected by a lead 5;

[0038] The central area of ​​the heat dissipation pad 1 is provided with a sunken groove 11 for embedding the chip 3, thereby forming a cofferdam portion 12 at the edge area of ​​the heat dissipation pad 1, and the bottom of the sunken groove 11 and the cofferdam portion 12 are in contact with the chip. A silver paste layer 2 is provided between the lower surface and the side wall of the 3, and a number of heat exchange blind holes 13 extending into the heat dissipation pad 1 are opened at the bottom of the sinker 11, and in the heat exchange blind holes 13 It has a silver paste filling par...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-stability DFN packaging device. The raw materials of the epoxy insulator include the following components in parts by weight: 80-100 parts of epoxy resin, 50-70 parts of novolac resin, 12-18 parts of liquid nitrile rubber 3-8 parts of diethyl pyrocarbonate, 65-90 parts of silicon micropowder, 0.1-1.5 parts of polyethylene glycol monooctyl phenyl ether, 2-5 parts of 3-aminopropyl triethoxysilane, acetic acid 2~6 parts of cellulose butyrate, 0.3~2 parts of 5‑fluoro‑2‑methoxyaniline, 0.5~5 parts of 2,4,6‑tris(dimethylaminomethyl)phenol, 1~5 parts of release agent parts, flame retardant 10~25 parts; the high-stability DFN packaging device has excellent heat dissipation effect and mechanical properties, stable and reliable packaging structure, and has broad application prospects.

Description

technical field [0001] The invention belongs to the technical field of leadless packaging, and in particular relates to a high-stability DFN packaging device. Background technique [0002] DFN is a leadless package with a square or rectangular shape. There is a large-area exposed pad at the center of the bottom of the package for heat conduction, and there are conductive pads around the periphery of the package around the large pad for electrical connection. Because the DFN package does not have gull-wing leads like the traditional SOIC and TSOP packages, the conductive path between the internal pins and the pad is short, the self-inductance coefficient and the internal wiring resistance of the package are very low, so it can provide excellent electrical performance. And be widely used. [0003] Due to the poor fluidity or uneven curing of the epoxy resin composition during the packaging process, it is easy to cause the internal gas to be not completely exhausted and produc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/29
CPCH01L23/367H01L23/295H01L2224/83385H01L2924/181H01L2224/73265H01L2224/48247H01L2224/48091H01L2224/32245H01L2924/00012H01L2924/00014H01L2924/00
Inventor 马磊党鹏杨光彭小虎王新刚庞朋涛任斌王妙妙
Owner 西安航思半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap