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A chemical vapor deposition method and system

A chemical vapor deposition and gas technology, which is applied in the field of chemical vapor deposition methods and systems, can solve the problems that silicon semiconductor integrated circuits cannot work normally, affect the yield of integrated circuits, and disconnect metal wires, and reduce the probability of residual particles, The effect of improving degree and efficiency and improving product yield

Active Publication Date: 2021-03-12
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of particles remaining on the edge of the silicon wafer, continuing to manufacture silicon semiconductor integrated circuits will seriously affect the yield of integrated circuits
For example, the residual particles on the edge of the silicon wafer lead to the disconnection of the metal wires in the subsequent manufacturing process, and the silicon semiconductor integrated circuit cannot work normally.

Method used

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  • A chemical vapor deposition method and system
  • A chemical vapor deposition method and system
  • A chemical vapor deposition method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Embodiment 1 of the present invention provides a chemical vapor deposition method, such as figure 1 shown, including the following steps.

[0056] Step S10: if figure 2 As shown, a thin film 110 is deposited over a substrate 120 within a reaction chamber 200 .

[0057] In an example of Embodiment 1 of the present invention, the substrate 120 is a silicon wafer. It should be noted that a silicon wafer is only a substrate of a specific material, and the specific substrate material to be used can be selected according to the actual needs of the product to be manufactured.

[0058] Step S20: if figure 2 As shown, the film 110 is purged and the gas in the reaction chamber is sucked through the suction pipe 210 to take away the particles generated by the deposited film; wherein, the inlet end of the suction pipe 210 faces the height direction of the film 110, and the bottom of the inlet end the inner edge 211 is lower than the base plane 121 of the substrate, and the in...

Embodiment 2

[0063] In Embodiment 1, since the inner edge of the bottom of the inlet port is lower than the bottom of the film, that is, a part of the inlet surrounded by the inlet port faces the substrate under the film. In the case of the same inlet port and the same suction capacity, the more the inlet faces the substrate, the lower the suction efficiency will be. Therefore, in order to improve the efficiency of removing particles from the substrate, especially the edge of the substrate, Embodiment 2 of the present invention further requires the position of the inlet port and the film on the basis of Embodiment 1.

[0064] Such as figure 2 As shown, the distance between the inner edge 211 of the bottom of the inlet port and the reference plane 121 is represented by h 1 Indicates that the distance between the inner edge 212 of the top of the inlet port and the top of the film is expressed by h 2 said h 1 and h 2 conform to the following relationship:

[0065] h 2 >h 1 >0.

[006...

Embodiment 3

[0069] In the chemical vapor deposition method, the spraying of the deposition gas during the process of depositing the thin film and the spraying of the purge gas during the purging process of the cleaning process need to be realized through the same spray outlet. In these two processes, the distance from the carrying surface of the carrying substrate to the spraying is the same, such as in the case of a silicon wafer, the value of the distance from the carrying surface of the carrying substrate to the spraying The range is 10-13 mm.

[0070] Such as figure 2 As shown, in order to improve the efficiency of removing particles from the substrate, especially the edge of the substrate, Embodiment 3 of the present invention is based on Embodiment 1 and Embodiment 2 of the present invention. Exit 230 distances are further required.

[0071] The following steps are also included before purging the membrane and pumping the gas in the reaction chamber:

[0072] Reduce the distance...

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Abstract

The embodiment of the invention discloses a chemical vapor deposition method and system. The method comprises the steps of: depositing a thin film on a substrate in a reaction chamber; purging the thin film and sucking gas in the reaction chamber through a suction pipe to take away particles generated by depositing the thin film; direction, and the inner edge of the bottom of the inlet port is lower than the reference plane of the substrate, and the inner edge of the top of the inlet port is higher than the top of the film; the reference plane is the upper surface of the edge near the inlet port on the side of the substrate where the film is deposited. The system includes a reaction chamber; a deposition device with a spray outlet; a bearing surface located below the spray outlet; a suction device, the suction device includes a suction pipe; and an adjustment device arranged in the reaction chamber, the adjustment device is used to adjust the bearing surface The distance to the spray outlet is used to realize that the inner edge of the bottom of the inlet end of the suction pipe is lower than the reference plane, and the inner edge of the top of the inlet end is higher than the top of the deposited film on the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical vapor deposition method and system. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD for short) is a commonly used manufacturing process in the field of semiconductor manufacturing, at least including a thin film deposition process and a cleaning process. For example, in the process of manufacturing silicon semiconductor integrated circuits using silicon wafers as substrates, thin films need to be deposited on silicon wafers, and particles will be generated during this process, including solid particles and liquid particles formed by condensation. During the cleaning process, some particles will be discharged out of the reaction chamber along with the gas flow generated by the cleaning process, but some particles will still be deposited on the edge of the silicon wafer. In the case that particles remain on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC