Radiation resistant transistor based on patterned soi substrate and manufacturing method thereof
A manufacturing method and patterning technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as failure and leakage, and achieve the effect of eliminating leakage channels
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Embodiment 1
[0054] Such as figure 1 As shown, removing the insulating layer (BOX layer) below the channel of the SOI transistor can effectively prevent the total dose effect. A transistor structure based on a patterned SOI substrate is shown in figure 1 As shown, this solution removes the insulating layer below the transistor channel to form a groove 101, which can effectively reduce the total dose effect. However, the insulating layer (BOX layer) in the structure still has an overlapping contact portion 102 with the conductive channel, and when the total When the dose effect occurs, it will cause leakage in the direction of the cutting head as shown in the dotted line.
[0055] Based on the above problems, such as Figure 2 to Figure 28As shown, the present embodiment provides a method for fabricating an anti-irradiation transistor based on a patterned SOI substrate, the fabricating method comprising steps:
[0056] Such as Figure 2 ~ Figure 4 As shown, among them, figure 2 Shown...
Embodiment 2
[0079] This embodiment provides a radiation-resistant transistor based on a patterned SOI substrate and its manufacturing method. Its basic steps and structure are as in Embodiment 1, wherein the difference from Embodiment 1 is that the transistor is a PMOS transistor , the top semiconductor layer 203 is lightly doped with n-type, the heavily doped region 210 of the first conductivity type is heavily doped with n-type, and the source region 216 and drain region 217 are heavily doped with p-type.
[0080] As mentioned above, the fabrication method of the radiation-resistant transistor based on the patterned SOI substrate of the present invention has the following beneficial effects:
[0081] In the present invention, ion implantation is performed on both ends of the second semiconductor layer 205 of the cross-shaped semiconductor island to form a heavily doped region 210 of the first conductivity type, and the width of the heavily doped region 210 of the first conductivity type ...
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