Soi field effect transistor with leakage shielding structure and preparation method thereof
A technology of field effect transistors and shielding structures, which is applied in transistors, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as leakage and failure, and achieve the effect of reducing leakage channels
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Embodiment 1
[0071] like figure 1 As shown, removing the insulating layer (BOX layer) under the channel of the SOI transistor can effectively prevent the total dose effect. This solution removes the insulating layer under the transistor channel to form the groove 101, which can effectively reduce the total dose effect. However, In the structure, the insulating layer (BOX layer) still has an overlapping contact portion 102 with the conductive channel. When the total dose effect occurs, leakage current in the direction of the dashed line will be caused.
[0072] Based on the above problems, such as Figure 2 to Figure 39 As shown, the present embodiment provides a method for fabricating an SOI field effect transistor with a leakage shielding structure, the fabrication method comprising the steps of:
[0073] like Figure 2 to Figure 4 As shown, step 1) is first performed to provide a patterned SOI substrate 200 , the patterned SOI substrate 200 includes a bottom substrate 201 , an insulat...
Embodiment 2
[0101] This embodiment provides an SOI field effect transistor with a leakage shielding structure. The SOI field effect transistor with a leakage shielding structure can be prepared by the preparation method of the first embodiment, but is not limited to the preparation method of the first embodiment, as long as it can be formed The SOI field effect transistor with the leakage shielding structure is sufficient. For the beneficial effects achieved by the SOI field effect transistor with the leakage shielding structure, please refer to Embodiment 1, which will not be repeated below.
[0102] like Figure 2 to Figure 4 , Figure 35 to Figure 39 As shown, the SOI field effect transistor with leakage shielding structure includes:
[0103] A patterned SOI substrate 200 includes a bottom substrate 201, an insulating layer 202, and a top semiconductor layer 203, and the insulating layer 202 under the top semiconductor layer 203 has in the first direction and The groove 204 extendin...
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Abstract
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