SOI field effect transistor with electric leakage shielding structure and preparation method thereof
A technology of field effect transistors and shielding structures, which is applied in transistors, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as leakage and failure, and achieve the effect of reducing leakage channels
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Embodiment 1
[0071] Such as figure 1 As shown, removing the insulating layer (BOX layer) below the channel of the SOI transistor can effectively prevent the total dose effect. This solution removes the insulating layer below the transistor channel to form a groove 101, which can effectively reduce the total dose effect. However, In the structure, the insulating layer (BOX layer) still has overlapping contact portion 102 with the conductive channel. When the total dose effect occurs, it will cause leakage in the direction of the dashed line.
[0072] Based on the above problems, such as Figure 2 to Figure 39 As shown, the present embodiment provides a method for preparing an SOI field effect transistor with a leakage shielding structure, and the method for preparing includes the steps of:
[0073] Such as Figure 2 to Figure 4 As shown, step 1) is first performed to provide a patterned SOI substrate 200, the patterned SOI substrate 200 includes a bottom substrate 201, an insulating laye...
Embodiment 2
[0101] This embodiment provides an SOI field effect transistor with a leakage shielding structure, the SOI field effect transistor with a leakage shielding structure can be prepared by the preparation method of the first embodiment above, but is not limited to the preparation method of the first embodiment, as long as it can be formed An SOI field effect transistor with a leakage shielding structure may be sufficient. For the beneficial effects achieved by the SOI field effect transistor with the leakage shielding structure, please refer to Embodiment 1, which will not be repeated below.
[0102] Such as Figure 2 to Figure 4 , Figure 35 to Figure 39 As shown, the SOI field effect transistor with leakage shielding structure includes:
[0103] A patterned SOI substrate 200, the patterned SOI substrate 200 includes a bottom substrate 201, an insulating layer 202 and a top semiconductor layer 203, the insulating layer 202 below the top semiconductor layer 203 has a The groove...
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Abstract
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