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Annular gate field effect transistor based on cavity surrounding structure and preparation method

A technology of field effect transistors and ring gates, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as leakage, eliminate leakage channels, improve device yield and performance, and improve resistance to total dose radiation performance effect

Pending Publication Date: 2020-11-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a ring gate field effect transistor based on a cavity surrounding structure and a preparation method for solving the insulation problem of the transistor structure of the patterned SOI substrate in the prior art. The layer has overlapping contact with the conductive channel, which will cause leakage problems when the total dose effect occurs

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  • Annular gate field effect transistor based on cavity surrounding structure and preparation method
  • Annular gate field effect transistor based on cavity surrounding structure and preparation method
  • Annular gate field effect transistor based on cavity surrounding structure and preparation method

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Embodiment 1

[0051] Such as Figure 2 to Figure 16 As shown, among them, image 3 , 5 , 7, 9, 11, 13, 15 are displayed as figure 2 , 4 , 6, 8, 10, 12, and 14 are schematic cross-sectional structure diagrams at A-A'. This embodiment provides a method for preparing a ring gate field effect transistor based on a cavity surrounding structure. The preparation method includes the steps of:

[0052] Such as Figure 2 ~ Figure 3 As shown, step 1) is firstly performed to provide a substrate 201 , an insulating layer 202 and a semiconductor top layer 203 stacked in sequence, and the insulating layer 202 has an annular cavity 204 therein.

[0053] Specifically, step 1) includes:

[0054] Such as image 3 As shown, first perform 1-1), provide a semiconductor layer, and perform ion implantation on the semiconductor layer to form a peeling layer in the semiconductor layer, and there is a predetermined gap between the peeling layer and the cavity structure to be formed. distance, the preset dista...

Embodiment 2

[0082] Such as Figure 12 ~ Figure 13 As shown, this embodiment also provides a ring-shaped gate field-effect transistor based on a cavity-enclosed structure and a preparation method thereof. The width of 204 is smaller than the width of the ring grid 205 , and the ring grid 205 completely covers the ring cavity 204 in the vertical projection direction.

Embodiment 3

[0084] Such as Figure 14 ~ Figure 15 As shown, this embodiment also provides a ring-shaped gate field-effect transistor based on a cavity-enclosed structure and a preparation method thereof. Inside 204 is one or more annular support structures 2041 , which are retained by the insulating layer 202 . The annular supporting structure 2041 is provided in the annular cavity 204, which can effectively reduce the cavity characteristic size of the annular cavity 204, reduce the required thickness of the stripped semiconductor layer, and save the subsequent thinning process time. At the same time, the annular support structure 2041 can effectively strengthen the mechanical strength of the annular cavity 204 and improve the stability of the device during the subsequent use of the device.

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Abstract

The invention provides an annular gate field effect transistor based on a cavity surrounding structure and a preparation method, the field effect transistor comprises a substrate, an insulating layerand a semiconductor top layer which are stacked in sequence, an annular gate is arranged on the semiconductor top layer, a first pole and a second pole are formed in the semiconductor top layer, wherein the first electrode is located on the inner side of the annular grid and surrounded by the annular grid, the second electrode is located on the outer side of the annular grid and surrounds the annular grid, an annular cavity is formed in the insulating layer, the annular cavity surrounds the first electrode in the vertical projection direction, and the annular cavity overlaps with the annular grid in the vertical projection direction. According to the invention, the annular cavity is introduced below the source region or the drain region, and the grid electrode is arranged to be the annulargrid electrode structure corresponding to the annular cavity, so that a side edge structure formed by overlapping the conducting channels of the insulating layer can be thoroughly eliminated, an electric leakage channel is eliminated, and the total dose irradiation resistance can be greatly improved.

Description

technical field [0001] The invention belongs to the field of semiconductor design and manufacture, in particular to a ring gate field effect transistor based on a cavity surrounding structure and a preparation method. Background technique [0002] Transistors based on SOI substrates have good anti-single event effects, but because in the SOI structure, the insulating layer (BOX layer) tends to accumulate more positive charges when high-energy particles are incident, the positive charges cause in the SOI top layer silicon The parasitic conductive channel introduces leakage current, which makes the electrical performance of the device drift. [0003] Removing the insulating layer (BOX layer) under the channel of the SOI transistor can effectively prevent the total dose effect. A transistor structure based on a patterned SOI substrate such as figure 1 As shown, this solution removes the insulating layer below the transistor channel to form a groove 101, which can effectively r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/417H01L29/423H01L29/786
CPCH01L29/66742H01L29/42356H01L29/42376H01L29/41775H01L29/78603H01L29/78609
Inventor 刘强俞文杰
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI