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QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A device and quantum dot light-emitting technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as the influence of QDs layer, and achieve the effect of avoiding influence

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a QLED device and its preparation method, aiming to solve the problem of the QDs layer being affected by the prior art when the HTL or HIL of the inverted QLED device is prepared by the full solution method. The problem

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  • QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof
  • QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

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Embodiment 1

[0049] 1. The preparation method of C-QD comprises the following steps:

[0050] Mix 3mL ethanolamine solution and 4.5mL hydrogen peroxide solution evenly, and then react in a reaction furnace at 250°C for 120 minutes. The reaction solution changes from initially colorless to final black, in which ethanolamine is completely reacted, and hydrogen peroxide is also fully involved in the reaction. Finally, water is formed. Finally, the water is completely volatilized under heating to obtain C-QD. Then add a mixture of dimethoxyethanol and ethanol (the volume ratio is 80:1), and finally prepare a C-QD solution with a C-QD concentration of 5 mg / mL.

[0051] 2. A method for preparing an inverted QLED device, comprising the following steps:

[0052] First, a ZnO solution with a ZnO concentration of 30mg / mL was deposited on the ITO by spin-coating, with a rotation speed of 3Krpm, and annealed at a temperature of 80°C for 15min to obtain an ETL layer;

[0053] Then, a solution of lumi...

Embodiment 2

[0060] 1. The preparation method of C-QD comprises the following steps:

[0061] Mix 3mL of ethanolamine solution and 4mL of hydrogen peroxide solution evenly, and then react in a reaction furnace at 250°C for 120min. The reaction solution changes from initially colorless to final black, in which ethanolamine is completely reacted, and hydrogen peroxide is also fully involved in the reaction. Finally, water is formed. Finally, the water is completely volatilized under heating to obtain C-QD. Then dimethoxyethanol was added, and finally a C-QD solution with a C-QD concentration of 3 mg / mL was prepared.

[0062] 2. A method for preparing an inverted QLED device, comprising the following steps:

[0063] First, a ZnO solution with a ZnO concentration of 30mg / mL was deposited on the ITO by spin-coating, with a rotation speed of 3Krpm, and annealed at a temperature of 80°C for 15min to obtain an ETL layer;

[0064] Then, a solution of luminescent quantum dots with a concentration ...

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Abstract

The invention discloses a QLED (Quantum dot Light-Emitting Diode) device and a preparation method thereof. The QLED device comprises a cathode, a quantum dot light-emitting layer and an anode which are arranged in a stacked manner. The QLED device further comprises an interface layer arranged between the quantum dot light-emitting layer and the anode, wherein the interface layer is made of carbonquantum dots. The inverse QLED device prepared according to the invention is provided with the interface layer between an HTL layer and a QD layer, and the interface layer can prevent can prevent thedissolution and erosion on the QD layer in the process of preparing the HTL or HIL of the inverse QLED device according to an all solution method, so that that the efficiency of the device is improved.

Description

technical field [0001] The invention relates to the field of QLED devices, in particular to a QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have excellent characteristics such as narrow half-peak width, adjustable color, and solution-based preparation, making them a strong competitor for the next generation of display technology. Researchers study QLEDs from different angles, including research on QDs, HTL, ETL and electrodes; and research on the structure, performance and stability of devices. Most of the QLED devices studied by researchers are bottom-emitting positive QLED device structures, and the QLED structures that are really suitable for screen applications are inverse QLED device structures. Because the inverted QLED structure has the advantage of being directly connected to the backplane of the n-channel type TFT transistor. [0003] In recent years, researchers have also obtained inverse QLE...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
Inventor 王宇曹蔚然李龙基
Owner TCL CORPORATION