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A beam imaging device and laser radar

A beam imaging and light-emitting layer technology, applied in the semiconductor field, can solve the problem of high transmission loss

Active Publication Date: 2021-03-02
CHINA SCI PHOTON CHIP HAINING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defect of high transmission loss in the prior art, thereby providing a beam imaging device and laser radar

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  • A beam imaging device and laser radar
  • A beam imaging device and laser radar
  • A beam imaging device and laser radar

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Embodiment Construction

[0026] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] Figure 1 to Figure 4 It shows an embodiment of a beam imaging device provided by the present invention

[0028] The beam imaging device includes a substrate layer 10 , a cladding layer 20 , a pattern layer 30 , a p-type layer 40 , a light emitting layer 50 , an n-type layer 60 and an electrode layer 70 . Wherein, the p-type layer 40 includes a first p-type layer 41 and a second p-type layer 42 . The electrode layer 70 includes a first electrode layer 71 , a second electrode layer 73 and a third elect...

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Abstract

The invention provides a beam imaging device and a laser radar. The beam imaging device comprises a substrate layer, a cladding layer and a graphic layer which are arranged in a laminated manner, andfurther comprises a p-type layer surrounding the graphic layer and in contact with the cladding layer. The cladding layer and the p-type layer have refractive indexes not higher than a refractive index of the graphic layer; the p-type layer comprises a first p-type layer and a second p-type layer which are arranged at intervals; an illuminating layer, and an n-type layer, a first electrode layer and a second electrode layer which are used for driving the illuminating layer are arranged on the p-type layer; and a third electrode layer for heating the graphic layer is arranged on the second p-type layer. By means of the beam imaging device, light can be totally reflected at the interface, the light is limited for transmission in the graphic layer, and the transmission loss of the light is reduced; and the p-type layer isolates the graphic layer from the outside, protects the graphic layer to certain extent, and prevents damage to the graphic layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a beam imaging device and a laser radar. Background technique [0002] Similar to the principle of radar, lidar calculates the relative distance between the target and itself based on the return time after the laser encounters an obstacle. The laser beam can accurately measure the contour edge of objects in the field of view. The contour information forms the so-called point cloud and draws a 3D environmental map. The accuracy can reach the centimeter level, so it has excellent application advantages in automotive driverless and security environment monitoring. [0003] The beam imaging device is the core part of lidar. Traditional beam imaging devices generally use prisms, which is not conducive to integration. In view of this, the current beam imaging device uses a semiconductor integrated circuit, which has the advantages of small size, low price and easy integration....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01S7/481G01S13/89
CPCG01S7/4816G01S13/89
Inventor 田立飞刘敬伟韦钟辉
Owner CHINA SCI PHOTON CHIP HAINING TECH CO LTD