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Semiconductor device and method of forming the same

A technology of semiconductor and capacitor devices, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Active Publication Date: 2019-07-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there may be many challenges regarding three-plate metal-insulator-metal capacitors

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

Examples

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Embodiment Construction

[0021] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify embodiments of the invention. Of course, these components and arrangements are examples only and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include that additional features may be formed between the first feature and the second feature. An embodiment is formed between the second features such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a rela...

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PUM

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Abstract

Embodiments of the invention relate to a semiconductor device and a method of forming the same. According to some embodiments, the semiconductor device includes a capacitive device, a first conductivevia, and a second conductive via. The capacitive device includes a first conductive plate, a first insulating plate, a second conductive plate, a second insulating plate, and a third conductive plate. The first conductive via is electrically coupled to the first conductive plate and the third conductive plate, and the first conductive via penetrated through a first film stack with a first thickness. The second conductive via is electrically coupled to the second conductive plate, and the second conductive via penetrated through a second film stack with a second thickness. The second thicknessis substantially equal to the first thickness.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices and methods of forming the same. Background technique [0002] The semiconductor industry continues to improve the integration density of various electronic components (eg, capacitors) through successive reductions in minimum feature size, a move that allows more components to be integrated into a given area. In some applications, these smaller electronic components also require smaller packages that utilize less area than packages of the past. [0003] One type of capacitor is a three-plate metal-insulator-metal (TP-MIM) capacitor. A three-plate metal-insulator-metal capacitor can be used as a decoupling capacitor. Three-plate metal-insulator-metal capacitors are formed horizontally on a semiconductor wafer with three metal plates sandwiching two dielectric layers parallel to the wafer surface. However, there may be many challenges with three-plate metal-insulator-metal capacitors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H10N97/00
CPCH01L28/40H01L28/87H01L23/5223H01L21/76805H01L29/94H01L21/0271H01L21/76877
Inventor 张宇行徐晨佑刘世昌
Owner TAIWAN SEMICON MFG CO LTD