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A base and equipment technology, applied in crystal growth, from chemically reactive gases, coatings, etc., can solve problems affecting growth efficiency and growth quality, low film growth efficiency, gas circulation, etc., to avoid suspension problems, The effect of improving growth uniformity, good film uniformity and quality

Active Publication Date: 2021-11-16
KING ABDULLAH UNIV OF SCI & TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, it is possible to melt the gas inlet device
However, if the gas inlet is kept away from the susceptor, it may result in inefficient, uneven growth or low yield of thin film growth on the wafer
To avoid this, the susceptor may need to rotate at high revolutions per minute (RPM), but the rotation may cause a circular flow of gas
This circulatory flow affects growth efficiency and growth quality

Method used

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Embodiment Construction

[0035] introduction

[0036] Additional more detailed descriptions are provided below.

[0037] References cited herein are incorporated by reference in their entirety.

[0038] Chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), metalorganic vapor phase epitaxy (MOVPE) and organometallic vapor phase epitaxy (OMVPE) are methods known in the art, and performing these methods is also known in the art. See, eg, Chemical Vapor Deposition: Principles and Applications, Hitchman, Jensen (editor), 1993. See also, eg, U.S. Patent Nos. 9,299,595, 8,709,162, 7,126,090, 6,321,680, 6,031,211, 5,964,943, 5,835,678, 5,759,263, 5,700,725; and U.S. Patent Publication No. 2010 / 0199914 No. 2008 / 0036155 and other references cited herein. See also JP2013115264 and CN103436862. Methods of fabricating reactors for carrying out these methods are known in the art.

[0039] In one embodiment, the gaskets, fluid manifolds or any other components described in US Pat. No....

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Abstract

A susceptor assembly for chemical vapor deposition (CVD) reactors, including metal organic CVD (MOCVD) used in the semiconductor industry. In particular, the susceptor assembly is used with induction heating and comprises a horizontal plate adapted to carry one or more wafers and a vertical rod around which an induction heating coil is arranged. Screw systems and thermal insulators can also be used. This design helps prevent unwanted suspension and allows the reactor's gas injectors to be located closer to the wafer for deposition at susceptor surface temperatures of about 1500°C or higher during high temperature deposition.

Description

Background technique [0001] Metal organic chemical vapor deposition (MOCVD) reactor designs vary. In the MOCVD reaction, a film of material is formed on a heated wafer surface by the reaction of a reactive gas against the heated surface. Products can be deposited on the wafer surface and gaseous by-products are removed from the reactor by exhaust pumps. MOCVD reactors have been used to prepare various epitaxial compounds, including various combinations of semiconductor single films and heterostructures such as lasers and LEDs. [0002] In general, there are several options for heating wafers, but two options are the most popular. The first option is heating with a resistive heater, and the second option is heating with an induction heater. However, conventional resistive heaters typically cannot provide deposition temperature stability above about 1500°C over long periods of time due to dimensional instability, ie, warpage. The deposition temperature is the wafer surface t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458C23C16/46C30B25/12
CPCC30B25/12C23C16/4583C23C16/4584C23C16/4585C23C16/46C23C16/4586
Inventor 李晓航李广辉哈马德·S·阿洛泰比
Owner KING ABDULLAH UNIV OF SCI & TECH
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