Silicon ingot squaring and slicing method

Abstract

The invention discloses a silicon ingot squaring and slicing method. The silicon ingot squaring and slicing method comprises the following steps that squaring is carried out on a silicon ingot only ina first direction to obtain a long strip of silicon ingot; unqualified parts around the long strip of silicon ingot are removed to obtain a long strip of silicon block which can be sliced; and alonga plane perpendicular to a plane formed by the growth direction of the silicon ingot and the first direction, the long strip of silicon block which can be sliced is sliced to obtain finished silicon wafers. Thus, the obtained silicon wafers have no difference between the heads and the tails, then the problems of large inter-wafer dislocation density difference and large battery efficiency difference of the silicon wafers can be solved, and the rejection rate of corner silicon blocks can be reduced.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic equipment manufacturing, in particular to a silicon ingot square and slicing method. Background technique [0002] The commonly used silicon ingot prescribing process is as follows: figure 1 as shown, figure 1 It is a schematic diagram of the commonly used silicon ingot squaring process. First, the silicon ingot 100 is glued on the metal tray, and the whole is placed in the multi-wire squaring cutting machine. Cutting, cutting to obtain silicon block 102, removing the side skin 103 after squaring, and cutting off the unqualified part 105 of the head and the unqualified part 106 of the tail for the silicon wafer 104 that can be sliced, and then slicing according to the vertical crystal growth direction to obtain silicon wafer 107, and then through subsequent processing to obtain a finished silicon wafer 108. The bottom silicon wafer obtained by the above process has the dislocation density ...

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a silicon ingot squaring and slicing method, which can solve the problems of large differences in dislocation density between silicon chips and large differences in cell efficiency, and can reduce the scrap rate of silicon blocks at corners

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