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Semiconductor structure and forming method thereof

A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problems of poor performance of semiconductor structure, achieve the effects of improving performance, reducing projection effect, and increasing etching rate

Active Publication Date: 2019-07-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of semiconductor structures formed by existing HKMG techniques is poor

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] There are many problems in the method for forming the semiconductor structure, for example, the performance of forming the semiconductor structure is poor.

[0025] Combining with a method of forming a semiconductor structure, the reason for the poor performance of the semiconductor structure formed by the prior art is analyzed:

[0026] figure 1 with figure 2 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.

[0027] Please refer to figure 1 , provide a substrate 100, the substrate 100 has a gate structure and a dielectric layer 120, the sidewall surface of the gate structure has a sidewall 140, the dielectric layer 120 covers the sidewall of the sidewall 140, and exposes Out of the top of the gate structure, there are source and drain doped regions 110 in the substrate 100 on both sides of the gate structure.

[0028] Please refer to figure 2 , etching the gate structure, removing part of the gate structure, fo...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps that a substrate is provided, wherein a gate structure and a dielectriclayer are arranged on the substrate, and a side wall is arranged on the surface of the end wall of the gate structure; the dielectric layer covers the end wall of the side wall and exposes the top ofthe gate structure; the part of the side wall is removed, and the end wall of a part of the gate structure is exposed, and a first opening is formed between the dielectric layer and the gate structure; after the part of the side wall is removed, a part of the gate structure is removed, and a second opening surrounded by the first opening is formed in the dielectric layer; and after the part of the gate structure is removed, an isolation layer is formed in the first opening and the second opening. According to the forming method, the isolation performance of the isolation layer can be improved, and the performance of the semiconductor structure can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous advancement of semiconductor technology, the feature size of semiconductor devices is gradually reduced. The reduction of critical dimensions means that more transistors can be arranged on the chip, and at the same time, higher requirements are placed on the semiconductor process. [0003] High dielectric constant insulating layer plus metal gate (High-k metal gate, HKMG) technology has become an essential technology for reducing the size of semiconductors. The HKMG formed by the gate-last process has the advantages of lower power consumption, less leakage, and stable high-frequency operation, and is gradually favored by people in the semiconductor industry. [0004] However, the performance of semiconductor structures formed by existing HKMG techniques ...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L29/423
CPCH01L29/401H01L29/42356
Inventor 张城龙涂武涛纪世良
Owner SEMICON MFG INT (SHANGHAI) CORP
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