Device for rapidly heating and annealing silicon carbide wafers

Abstract

The invention discloses a device for rapidly heating and annealing silicon carbide wafers. The device comprises a cooling chamber, a preheating chamber and a heating chamber connected in sequence, wherein the cooling chamber is located at one side of the preheating chamber, the heating chamber is located above the preheating chamber, rotatable silicon wafer trays are arranged in both the cooling chamber and the preheating chamber; a mechanical arm is disposed between the cooling chamber and the preheating chamber; and a lifting rack is disposed at the bottoms of the silicon wafer trays of thepreheating chamber. In the technical solution, by setting rotatable silicon wafer trays in the respective chambers and setting a mechanical arm between chambers, the preheating chamber and the coolingchamber can both perform material feeding and discharging, which ensures the continuity of material feeding and discharging. Due to the independently set cooling chamber, preheating chamber and heating chamber, a plurality of silicon carbide wafers can be respectively preheated, heated and cooled at the same time to realize simultaneous processing of multiple tasks, thereby greatly improving processing efficiency and making the heating and annealing efficiency of the silicon carbide wafers obviously improved.

Description

technical field [0001] The invention relates to the field of silicon carbide wafer processing, in particular to a rapid heating and annealing device for silicon carbide wafers. Background technique [0002] The heating annealing process refers to the rapid heating of silicon carbide wafers to about 2000 °C for a period of time, and then rapidly drops to 1200 °C. In the traditional heating annealing process of silicon carbide wafers, the silicon carbide wafers are placed in a heating furnace for heating. curve like figure 2 As shown, after completing the entire annealing process curve, open the furnace, take out the silicon carbide wafer that has completed the annealing process, and put the silicon carbide wafer to be annealed into the furnace at the same time, and repeat this process. [0003] However, the high-temperature annealing process method has low production efficiency, because [0004] 1. Every time it is replaced, the silicon carbide wafers newly put into the fur...

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Problems solved by technology

[0003] However, the high-temperature annealing process method has low production efficiency, because

[0004] 1. Every time it is replaced, the silicon carbide wafers newly put into the furnace are in a normal temperature state. figure 2 The curve shown rises, and then the temperature drops to perform the annealing step. Every time the heating furnace is processed, it must go through the heating and cooling steps, which consumes a lot of unnecessary time;

[0005] 2. In the process of starting the furnace, picking up the film, putting the film in, and closing the furnace, the furnace has been in an idle state and has not been fully utilized

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