Unlock instant, AI-driven research and patent intelligence for your innovation.

Large-size phase shift mask and producing method of same

A phase-shift mask and a manufacturing method technology, applied in the field of photomasks, can solve the problems such as the decrease of the contrast of the exposure light quantity distribution, and achieve the effects of low cost and improved contrast.

Inactive Publication Date: 2019-08-02
DAI NIPPON PRINTING CO LTD
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] On the other hand, when using the photomask 50 of this prior art to transfer the fine pattern 56 of the semi-transmissive film 53 by exposure, the transmission amount of the exposure light is greater than that obtained by using the light-shielding film of the common binary mask. The amount of transmission of the exposure light in the light-shielding pattern portion reduces the contrast of the exposure light distribution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-size phase shift mask and producing method of same
  • Large-size phase shift mask and producing method of same
  • Large-size phase shift mask and producing method of same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0095] (Constituent material of large phase shift mask)

[0096] refer tofigure 1 The sectional view of (a) demonstrates the concrete material of each component of the large phase shift mask 1 of this invention. figure 1 The large phase shift mask 1 shown in (a) has a structure including a transparent substrate 2, a light shielding film 3 formed on the transparent substrate 2, and a translucent phase shift film 4 formed on the transparent substrate 2. photomask.

[0097] The size of the transparent substrate 2 used in the large phase shift mask 1 of the present invention is 350mm×350mm to 1220mm×1400mm, and the thickness is 8mm˜13mm. Optically polished low-expansion glass (aluminoborosilicate glass, borosilicate glass) or synthetic quartz glass can be used as the material, but synthetic quartz glass with a small thermal expansion rate and high ultraviolet transmittance is suitable.

[0098] The light-shielding film 3 used in the present invention is required to have a transm...

Embodiment

[0134] (contrast with respect to exposure intensity distribution)

[0135] image 3 It is an explanatory diagram comparing the effect of improving the contrast of the exposure intensity distribution of the large phase shift mask (Example 1) of the present invention with that of a conventional binary mask (Comparative Example 1). image 3 (a) is a plan view showing a line and space pattern of a large phase shift mask (Example 1) of the present invention, image 3 (b) is a plan view showing a line-and-space pattern of a conventional binary mask (Comparative Example 1), image 3 (c) is to image 3 (a) with image 3 (b) The graph obtained by comparing the exposure intensity distribution on the imaging surface of the mask shown.

[0136] In addition, Table 1 is a table which compared the contrast improvement effect of the exposure intensity distribution of the large phase shift mask (Example 1) of this invention, and the conventional binary mask (Comparative Example 1).

[013...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a large-size photo mask which exposes a large-size region and has a structure suitable for forming fine patterns, and a producing method of the large-size photo mask. The large-size photo mask which is easily produced and is capable of transferring fine patterns is obtained by a structure, wherein a primary component of a light shielding film is chromium or a chromium compound, a primary component of a phase shift film is chromic oxide or chromic nitric oxide, and the phase shift film is laminated on the light shielding film in a light shielding region. Further,the large-size photo mask further comprises an antireflection film made of a chromium compound between the light shielding film and the phase shift film, and therefore the reflection rate of the lightshielding region is restrained.

Description

[0001] This application is a divisional application of Application No. 201280051359.0 entitled "Large Phase Shift Mask and Method for Manufacturing Large Phase Shift Mask" filed with the State Intellectual Property Office of China on October 19, 2012. technical field [0002] The present invention relates to a kind of photomask, relate in particular to a kind of large-scale photomask that can be used in the manufacture of liquid crystal display device, electroluminescent display device (EL, electroluminescence) etc. active matrix type display device and the manufacture of large-scale photomask method. Background technique [0003] The specification change of photomasks used in the manufacture of flat panel displays (abbreviated as FPD (Flat Panel Display)) is based on the large-screen and high-definition common in thin TVs using liquid crystal display devices (abbreviated as LCD (Liquid Crystal Display)). turned into a representative. With regard to the large screen size, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/26G03F1/46
CPCG03F1/26G03F1/32
Inventor 木下一树飞田敦二岛悟
Owner DAI NIPPON PRINTING CO LTD