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Method for monitoring characteristics of radiation from a measuring device

A technology of measurement and characteristics, which is applied in the direction of measuring devices, optical devices, and exposure devices for photolithography, and can solve problems such as controlling the focus of the optical system

Active Publication Date: 2021-08-24
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] A common problem in inspection setups is the problem of controlling the focus of the optics onto the target

Method used

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  • Method for monitoring characteristics of radiation from a measuring device
  • Method for monitoring characteristics of radiation from a measuring device
  • Method for monitoring characteristics of radiation from a measuring device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0019] figure 1 A lithographic apparatus LA is schematically depicted. The lithography apparatus LA includes:

[0020] - an illumination system (illuminator) IL, configured to condition the radiation beam B (eg UV radiation or DUV radiation).

[0021] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to a first positioner PM configured to position accurately according to certain parameters Patterning device MA;

[0022] - a substrate table (eg, wafer table) WT, configured to hold a substrate (eg, a resist-coated wafer) W and connected to a second positioner PW, which is configured according to certain parameters to accurately position the substrate W; and

[0023] - a projection system (eg a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target portion C (eg comprising one or more dies) of the substrate W.

[0024] The...

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PUM

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Abstract

A method for monitoring characteristics of illumination from a metrology device, the method comprising: acquiring pupil images using the metrology device at different focus settings of the metrology device; and calculating the difference of each acquired pupil image Symmetry value; where each pupil image is acquired on at least one edge of the target of the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to EP application 16204662.7, filed on December 16, 2016, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a method for monitoring the properties of illumination from a metrology device. The present invention can be applied, for example, to inspection devices. Background technique [0004] A photolithographic process is a process of applying a desired pattern to a substrate, usually to a target portion of the substrate. For example, lithographic apparatuses can be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, which is alternatively referred to as a mask or reticle, may be used to generate circuit patterns to be formed on individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or several dies) on a substrate (eg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F9/00G01N21/956
CPCG01N21/956G03F7/70616G03F9/7026G03F7/70625G03F7/70633G01N21/8806G03F7/70641G01B11/028G01M11/0264
Inventor J·T·J·施梅茨-沙根H·A·J·克拉默A·E·A·库伦B·O·法格金杰·奥尔
Owner ASML NETHERLANDS BV