Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A temperature-stable ceramic dielectric material and its preparation method

A temperature-stable, ceramic dielectric technology, used in ceramics, inorganic insulators, etc., can solve the problems of narrow operating temperature range, high sintering temperature, low dielectric constant, etc., and achieve a wide operating temperature range, high dielectric constant, high The effect of dielectric constant

Inactive Publication Date: 2021-12-17
TAIYUAN NORMAL UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, more temperature-stable ceramic capacitor materials have been reported, including tungsten bronze structure ceramic system, lead-based relaxor ferroelectric ceramic system and BaTiO 3 The base ferroelectric ceramic system is a dielectric ceramic material, but these ceramic materials contain a large amount of heavy metal lead, high sintering temperature, narrow working temperature range, low dielectric constant and high loss, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A temperature-stable ceramic dielectric material and its preparation method
  • A temperature-stable ceramic dielectric material and its preparation method
  • A temperature-stable ceramic dielectric material and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] A method for preparing a temperature-stable ceramic dielectric material, comprising the following steps:

[0023] (1) the raw material Bi 2 o 3 , MgO and TiO 2 According to the general formula BiMg 0.1 Ti 0.7 o 3 , carry out batching ball milling, heat up to 800 ° C, keep warm for 2-4 hours, and obtain frit A;

[0024] (2) According to the mass percentage, 5-20% KNbO 3 , 10-20% SrTiO 3 Carry out secondary batching with 70-85% frit A to obtain batching B;

[0025] (3) Ball mill ingredient B, add 5-8wt% binder of ingredient B to granulate, press into a green body, raise the temperature to 400-500°C, then raise the temperature to 1020°C-1050°C for 1 hour, and cool it to obtain Temperature stable ceramic dielectric material.

[0026] In the present invention, the binder added in step (3) will volatilize in the subsequent heating process, and the sintering process in step (3) of the present invention is mainly for the purpose of making the ceramic dielectric materia...

Embodiment 1

[0043] Raw material Bi 2 o 3 , MgO and TiO 2 According to the general formula BiMg 0.1 Ti 0.7 o 3 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 800°C at 5°C / min, and keep the temperature at 800°C for 3 hours to obtain frit A.

[0044] For secondary batching, according to 5% KNbO 3 , 10% SrTiO 3 Mix evenly with 85% of the mass of frit A, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Sieve the sample, add 8wt% paraffin to granulate, press into a green body, first heat up to 450°C at a heating rate of 2°C / min, then heat to 1020°C at a heating rate of 10°C / min for firing, and hold for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0045] The test result (test frequency is 1KHz) of the dielectric property of above-ment...

Embodiment 2

[0049] Raw material Bi 2 o 3 , MgO and TiO 2 According to the general formula BiMg 0.1 Ti 0.7 o 3 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 800°C at 5°C / min, and keep the temperature at 800°C for 3 hours to obtain frit A.

[0050] For secondary batching, according to 10% KNbO 3 , 20% SrTiO 3 Mix evenly with 70% of the mass relationship of frit A, add deionized water, ball mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Sieve the sample, add 8wt% paraffin to granulate, press into a green body, first heat to 450°C at a heating rate of 2°C / min, and then heat to 1030°C at a heating rate of 10°C / min for firing, and hold for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0051] The test result (test frequency is 1KHz) of above-mentioned e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
dielectric lossaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of ceramic dielectric materials, in particular to a temperature-stable ceramic dielectric material and a preparation method thereof. It is made of KNbO with a mass percentage of 5‑20% 3 , 10‑20% SrTiO 3 and 70‑85% BiMg 0.1 Ti 0.7 o 3 consist of. The temperature stable ceramic dielectric material provided by the present invention, SrTiO 3 -BiMg 0.1 Ti 0.7 o 3 The dielectric ceramic has a moderate sintering temperature, generally around 1050°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention selects SrTiO 3 -BiMg 0.1 Ti 0.7 o 3 system, take the addition of KNbO 3 It is a method of doping modification, which not only meets temperature stability, but also has the advantages of high dielectric constant and low dielectric loss.

Description

technical field [0001] The invention relates to the field of ceramic dielectric materials, in particular to a temperature-stable ceramic dielectric material and a preparation method thereof. Background technique [0002] With the development of integrated circuits, electronic communication equipment terminals are developing towards miniaturization. Chip multilayer ceramic capacitors can well adapt to this trend, and thus have been widely used. And with the development of technology, its superior performance is becoming more and more obvious, and there is a tendency to gradually replace tantalum capacitors and electrolytic capacitors. The world's annual market sales are hundreds of billions, widely used in various surface mount circuits of electronic information products [0003] In recent years, with the popularization and wide application of electronic information equipment in all walks of life, especially in some special industries and extreme environments, higher require...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B3/12C04B35/475C04B35/622
CPCC04B35/475C04B35/622C04B2235/3206C04B2235/6562C04B2235/6567
Inventor 郭雅晶周瑶瑶王二琴
Owner TAIYUAN NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com