38results about How to "Moderate sintering temperature" patented technology

The invention discloses a method for preparing a wear-resisting netty Cr3C2 reinforced NiAl alloy. The wear-resisting netty Cr3C2 reinforced NiAl alloy is prepared from Ni powder, Al powder, Cr powderand Ni covered graphite powder through ball milling and the SPS sintering technology. The alloy prepared through the method is simple in structure, and a three-dimensional netty Cr3C2 ceramic reinforced phase is constructed in a NiAl intermetallic compound matrix of an isometric crystal structure. The method is simple in process operation and low in cost, the prepared material has high yield strength and excellent wear resistance at the temperature of room temperature to 800 DEG C, and wide industrial application prospects are achieved.

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X7R ceramic dielectric material and a preparation method thereof. The material is prepared from,by mass, 5-25% of Nd2O3 and 75-95% of Ca0.95La0.05Cu2.55Zn0.5Ti4O12. According to the high-dielectric X7R ceramic dielectric material, Ca0.95La0.05Cu2.55Zn0.5Ti4O12 dielectric ceramics have a moderatesintering temperature which is always about 1130 DEG C, and are high in dielectric constant, adjustable in capacity temperature coefficient and low in loss. The material is a dielectric ceramic material with excellent performance. A Ca0.95La0.05Cu2.55Zn0.5Ti4O12 system is selected, and the method of adding Nd2O3 for doping and modification is utilized, so that the material has the advantages of being high in dielectric constant, low in dielectric loss, free of lead and environmentally friendly while the performance X7R standard is met.

The invention belongs to the technical field of ceramic dielectric materials, and provides a ceramic dielectric material with a negative temperature coefficient and a preparation method thereof in order to prevent the capacitance of a capacitor from increasing due to a temperature rise or other factors in the use process of the capacitor and improve the reliability. The ceramic dielectric materialcomprises 10-30wt% of CaTiO3 and 70-90wt% of K2Sr4 (Nb8Mg2) O27. The ceramic dielectric material meets the EIAX7R standard, the capacitance change rate in the temperature range of 55 DEG C to 125 DEGC does not exceed + / -15%. The ceramic dielectric material has a good dielectric property, the dielectric constant can reach about 4700 at the temperature of 25 DEG C, and the loss is 0.0065. The ceramic dielectric material has a negative capacitance temperature coefficient, compensates for the increase of capacitance caused by the temperature rise or other factors, and improves the reliability. The ceramic dielectric material has the advantages of wide sintering temperature range, adjustable performances, good stability and reproducibility, high reliability, and environmental friendliness, moreover, the ceramic dielectric material does not contain any harmful substances such as heavy metal.

The invention discloses a low-temperature co-fired ceramic medium material. The material consists of 1 to 16 weight percent of glass powder and 84 to 99 weight percent of Ba6-3x(Nd0.4Bi0.6)8+2xTi18O54, wherein the x is 0.5 to 1.5. The glass powder is at least one of the following two types of glass powder, namely glass powder B consisting of 30 to 50 mass percent of Li2CO3 and 5 to 20 mass percent of SiO2 and 40 to 60 mass percent of H3BO3 and glass powder C consisting of 15 to 40 mass percent of LiF and 60 to 85 mass percent of BaF2. In a preparation process, first, clinker is prepared; then, secondary preparation of the glass powder and the clinker is performed; and finally, sintering is performed. A BaO-Nd2O3-Bi2O3-TiO2 system is selected and a method of adding the glass powder as a sintering aid is adopted, so the material has the characteristics of sintering temperature below 900 DEG C, high dielectric constant and low dielectric loss, simultaneously has a wide sintering shrinkage range, and can be co-fired with a silver metallic electrode with high conductivity.

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X8R ceramic dielectric material and a preparation method thereof. is composed of 5‑20% by weight Sc 2 o 3 and 80‑95% by weight of K 2 Sr 4 Nb 6 o 20 consist of. High dielectric X8R ceramic dielectric material provided by the present invention, K 2 Sr 4 Nb 6 o 20 The dielectric ceramic has a moderate sintering temperature, generally around 1250°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention chooses K 2 Sr 4 Nb 6 o 20 system, take the addition of Sc 2 o 3 The method of doping modification makes it meet the performance X8R standard, and at the same time has the advantages of high dielectric constant, low dielectric loss, lead-free and environmental protection.

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X7R ceramic dielectric material and a preparation method thereof. It is composed of Nd with a mass percentage of 5‑25% 2 o 3 and 75‑95% Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 consist of. High dielectric X7R ceramic dielectric material provided by the present invention, Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 The dielectric ceramic has a moderate sintering temperature, generally around 1130°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention selects Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 system, take the addition of Nd 2 o 3 The method of doping modification makes it meet the performance X7R standard, and at the same time, it has the advantages of high dielectric constant, low dielectric loss, lead-free and environmental protection.

The invention belongs to the technical field of ceramic dielectric materials, and provides a positive-temperature-coefficient ceramic dielectric material and a preparing method thereof in order to solve the problem that a capacitance temperature coefficient of an existing ceramic dielectric material is positive or negative and continuously changes within the range from -55 DEG C to 150 DEG C. Theceramic dielectric material is prepared from, by mass, 80-90% of Na0.2Bi0.6ZrO3 and 10-20% of Yb2O3. The ceramic dielectric material has the advantages of high dielectric constant, low in dielectric loss and positive temperature coefficient. The material Na0.2Bi0.6ZrO3 has a perovskite structure and has no Curie peak within the range from -55 DEG C to 150 DEG C, Na+ and Bi3+ can be stably fixed after Yb2O3 is dopted, and the ceramic dielectric material has a positive capacitance temperature coefficient within the range from -55 DEG C to 150 DEG C.

The present invention discloses a lead-free glass frit for the dielectric layer of a plasma display, and the glass frit comprises the following raw materials according to the weight percentage: 30%-50% of Bi2O3, 5%-40% of B2O3, 5%-30% of BaO, 0.1%-10% of Al2O3, 0.1%-10% of ZnO, 0.1%-10% of MgO and0.1%-5% of La2O3. The invention has the advantages that the glass frit belongs to environment-friendly materials; various performances are excellent; the cost performance is high; the glass frit has suitably and easily adjusted thermal expansion coefficient and proper sintering temperature, and also has good chemical stability and high dielectric strength; the competitive power is very strong in lead-free performance and cost performance; and the glass frit has wide market development prospect.

A preparation method of a low-temperature-sintering chip-type voltage dependent resistor material includes the following steps: (1) raw material preparation: preparing the raw materials including, on the basis of 100 parts by weight, 1-3 parts of ZrO2, 2-5 parts of FeCl2, 1-2 parts of Fe3O4, 1-2 parts of Fe2O3, 1-3 parts of AlCl3, 1-4 parts of nano Cr2O3, 2-5 parts of nano SiO2, 2-5 parts of Mn2O3, and the balanced being ZnO; (2) mixing the raw materials and adding deionized water, performing wet-milling for 48-50 h and drying the mixture at 140-160 DEG C; (3) under the pressure of 5-8 MPa, shaping the mixture into small round chips being 20 mm in diameter [Phi] and being 1.4-1.8 mm in thickness, and sintering the chips in air and naturally cooling the chips to room temperature; and (4) sinter-coating the two surfaces of the sintered ceramic body with silver. The chip-type voltage dependent resistor has low varistor voltage, high non-linear coefficient and stable voltage-dependent characters, is moderated in sintering temperature, has simple and controllable produce technology, and is low in cost.

The invention relates to a SiO2-Al2O3 hollow ceramic ball and a preparation method thereof. The hollow ceramic ball is mainly composed of three elements of silicon, aluminum and oxygen and contains a small amount of the element of sodium, and the elements form silicon oxide, aluminum oxide and mullite; and the outer diameter of the ball is 0.04-0.8mm, the true density is 0.7-1.7g / cm<3>, the wall thickness is 5-70 mu m, and the static-pressure strength is 60-120 MPa. The preparation method comprises the following steps: sequentially adding 1-10 parts by weight of alpha-Al2O3 or pyrophyllite and 1-5 parts by weight of urea into 20-35 parts by weight of sodium silicate, stirring at a high speed until the raw materials are uniformly distributed, granulating, prefiring, performing acid washing to remove sodium, and sintering at high temperature to obtain the hollow ceramic ball. The hollow ceramic ball is lower in density, hollowed-out, better in sphericity, bigger in wall thickness, higher in fire resistance and higher in strength, thus being a novel light-weight refractory material and a low-density proppant. Besides, the preparation method is simple to operate, and the raw materials are wide in source.

The invention relates to the field of ceramic dielectric materials, in particular to a temperature-stable ceramic dielectric material and a preparation method thereof. It is made of KNbO with a mass percentage of 5‑20% 3 , 10‑20% SrTiO 3 and 70‑85% BiMg 0.1 Ti 0.7 o 3 consist of. The temperature stable ceramic dielectric material provided by the present invention, SrTiO 3 -BiMg 0.1 Ti 0.7 o 3 The dielectric ceramic has a moderate sintering temperature, generally around 1050°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention selects SrTiO 3 -BiMg 0.1 Ti 0.7 o 3 system, take the addition of KNbO 3 It is a method of doping modification, which not only meets temperature stability, but also has the advantages of high dielectric constant and low dielectric loss.

The invention discloses a low-temperature co-fired ceramic dielectric material and a preparation method thereof. The material includes the following raw materials in mass percentage: glass powder 5-20%, Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti4O 12 80‑95%. Described glass powder comprises the raw material of following mass percent: Li 2 CO 3 5‑40%, ZnO 5‑30%, BaCO 3 5‑30%, CaCO 3 5‑30% and Kaolin 5‑30%. The preparation method is as follows: the raw materials are weighed according to the stoichiometric ratio of the general formula, and the frit A is obtained; 5-20% glass powder B and 80-95% frit A are mixed and ball-milled according to the mass percentage, and the binder is added , granulation, heat preservation at 800-850°C for 1 hour, and cooling. The ceramic dielectric material has low sintering temperature, high dielectric constant and low dielectric loss, and can be co-fired with silver metal internal electrodes with high conductivity.

The present invention is a machinable ceramic material and a preparation method thereof, wherein the material comprises glass powder with a mass percentage of 70-90%, nano diatomite with a mass percentage of 5-20% and ZrO with a mass percentage of 1-10% 2 ; Described glass powder comprises the component of following mass percent: the MgF of 15-30% 2 , 5‑20% of P 2 o 5 , 5‑15% of K 2 O, 5‑10% Al 2 o 3 (hollow microspheres) and 25‑40% SiO 2 Composition of glass powder. The material adopts the method of adding nano-diatomite as a modifier, and the nano-diatomite is evenly dispersed in the glass phase to play the role of fiber self-toughening and strengthening. The sintering temperature of the machinable ceramic material of the invention is low, and the bending strength and fracture toughness are improved.

The invention relates to a zinc oxide voltage dependent resistor medium material and a resistor preparation method, which belongs to the technology field of electronic material. The components of the zinc oxide voltage dependent resistor medium material comprises 85 percent to 95 percent of ZnO, 2 percent to 6 percent of Bi2O3, 1 percent to 5 percent of TiO2, 1 percent to 3.5 percent of Sb2O3, 1 percent to 4 percent of MnCO3, 1.2 percent to 5 percent of Co2O3, 0.2 percent to 1 percent of Cr2O3, 0.1 percent to 1 percent of ZrO2, 0.2 percent to 1 percent of Ni2O3 and 1.2 percent to 3 percent ofSiO2. The chip type zinc oxide resistor preparation method comprises the steps of dosing according to a zinc oxide resistor medium material medium material, material mixing, material grinding, casting sizing agent making, casting, inner electrode printing, laminating, baking, temperature isostatic pressing, cutting, gule discharging, sintering, end electrode making, and the like. The zinc oxide voltage dependent resistor medium material of the invention is suitable for making chip type voltage dependent resistor; the prepared chip type voltage dependent resistor has the characteristics of low voltage-dependent voltage, high nonlinear coefficient and stable voltage-dependent characteristic, the sintering temperature is moderate, preparation technology is simple and is easy to control, and cost is low.

The invention discloses a high dielectric low temperature co-fired ceramic dielectric material and a preparation method thereof, the material comprises the following raw materials by mass: 5-20% of glass powder and 80-95% of K2Sr4Nb6O20-0.2Sc2O3. The glass powder includes the following raw materials by mass: 15-30% of Na2CO3, 5-20% of SiO2, 10-25% of KF, and 25-40% of H3BO3. The preparation methodis as follows: weighing the raw materials according to the stoichiometric ratio of the general formula K2Sr4Nb6O20-0.2Sc2O3 to obtain a frit A; mixing the glass powder B and the 80% of 95% of the frit A according to the mass percentage for ball milling, adding an adhesive, granulating, thermally incubating at 900 DEG C -950 DEG C for 1 hour, and cooling. The high dielectric low temperature co-fired ceramic dielectric material has a low sintering temperature, a high dielectric constant and a low dielectric loss, and can be co-fired with a high conductivity silver metal internal electrode.

The invention belongs to the technical field of ceramic dielectric materials, and provides a negative temperature coefficient ceramic dielectric material and a preparation method thereof in order to prevent the capacitor from increasing in capacitance due to temperature rise or other factors during use and to improve reliability. 10‑30% by weight of CaTiO 3 and 70‑90% by weight of K 2 Sr 4 (Nb 8 Mg 2 )O 27 composition. Conforms to EIA X7R standard, and the capacitance change rate within the temperature range of -55°C to 125°C does not exceed ±15%. It has good dielectric properties, the dielectric constant can reach about 4700 at 25°C, and the loss is 0.0065. It has a negative capacitance temperature coefficient, which can compensate for the increase in capacitance caused by temperature rise or other factors, and improve reliability. The sintering temperature range is wide, the performance is adjustable, the stability and reproducibility are good, and the reliability is high. It does not contain harmful substances such as heavy metals, and is environmentally friendly.