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A kind of high dielectric low temperature co-fired ceramic dielectric material and preparation method thereof

A technology of low temperature co-fired ceramics and dielectric materials, applied in the field of ceramic dielectric materials, can solve the problems of high sintering temperature, low dielectric constant and high loss, and achieve high dielectric constant, high dielectric constant and low dielectric loss. Effect

Inactive Publication Date: 2021-03-30
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are many low-temperature co-fired ceramic materials reported as BaO-TiO 2 , Ca(Li 1 / 3 Nb 2 / 3 )O 3-δ 、Bi 2 o 3 -ZnO-Nb 2 o 5 / Ta 2 o 5 、BaO-Ln 2 o 3 -TiO 2 (Ln=Nd, Sm) and Pb 1–x Ca x (Fe 1 / 2 ,Nb 1 / 2 )O 3 and other dielectric ceramic materials, but these ceramic materials have problems such as high sintering temperature, low dielectric constant and high loss

Method used

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  • A kind of high dielectric low temperature co-fired ceramic dielectric material and preparation method thereof
  • A kind of high dielectric low temperature co-fired ceramic dielectric material and preparation method thereof
  • A kind of high dielectric low temperature co-fired ceramic dielectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A high-dielectric low-temperature co-fired ceramic dielectric material, comprising the following raw materials in mass percentages: glass powder 5%, K 2 Sr 4 Nb 6 o 20 -0.2Sc 2 o 3 95%, the glass powder includes the following raw materials in mass percentage: Na 2 CO 3 15%, SiO 2 20%, KF 25% and H 3 BO 3 40%.

[0029] Its preparation process is as follows:

[0030] 1) The raw material K 2 CO 3 , SrCO 3 , Nb 2 o 5 and Sc 2 o 3 According to formula K 2 Sr 4 Nb 6 o 20 -0.2Sc 2 o 3 , for batching, ball milling on a ball mill with a speed of 400r / min for 6 hours, in a 3.3kw ordinary oven, after drying at 100°C, pass through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at a rate of 5°C / min, and keep it at 1100°C for 3 hours to obtain frit A.

[0031] 2) Weigh Na 2 CO 315g, SiO 2 20g, KF 25g, H 3 BO 3 40g, mixed, cooled with molten water, ground, and sieved to obtain glass powder B.

[0032] 3) Carry out secondary batching, wei...

Embodiment 2

[0037] A high-dielectric low-temperature co-fired ceramic dielectric material, including the following raw materials in mass percentages: glass powder 10%, K 2 Sr 4 Nb 6 o 20 -0.2Sc 2 o 3 90%. Described glass powder comprises the raw material of following mass percent: Na 2 CO 3 25%, SiO 2 15%, KF 20% and H 3 BO 3 40%.

[0038] The preparation process is as follows:

[0039] 1) The raw material K 2 CO 3 , SrCO 3 , Nb 2 o 5 and Sc 2 o 3 According to formula K 2 Sr 4 Nb 6 o 20 -0.2Sc 2 o 3 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at 10°C / min, and keep it at 1100°C for 2 hours to obtain frit A.

[0040] 2) Weigh Na 2 CO 3 25g, SiO 2 15g, KF 20g, H 3 BO 3 40g, mixed, cooled with molten water, ground, and sieved to obtain glass powder B.

[0041] 3) For secondary batching, weig...

Embodiment 3

[0046] A high-dielectric low-temperature co-fired ceramic dielectric material, comprising the following raw materials in mass percentages: glass powder 15%, K 2 Sr 4 Nb 6 o 20 -0.2Sc 2 o 3 85%. Described glass powder comprises the raw material of following mass percent: Na 2 CO 3 30%, SiO 2 20%, KF 25% and H 3 BO 3 25%.

[0047] The preparation process is as follows:

[0048] 1) The raw material K 2 CO 3 , SrCO 3 , Nb 2 o 5 and Sc 2 o 3 According to formula K 2 Sr 4 Nb 6 o 20 -0.2Sc 2 o 3 , for batching, ball milling on a ball mill with a speed of 400r / min for 6 hours, drying at 100°C in a 3.3kw ordinary oven, and passing through 120 holes / cm 2 Sieve the sample, raise the temperature to 1000°C at 8°C / min, and keep it at 1000°C for 4 hours to obtain frit A.

[0049] 2) Weigh Na 2 CO 3 30g, SiO 2 20g, KF 25g, H 3 BO 3 25g, mixed, cooled with molten water, ground, and sieved to obtain glass powder B.

[0050] 3) Carry out secondary batching, weigh f...

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Abstract

The invention discloses a high dielectric low temperature co-fired ceramic dielectric material and a preparation method thereof, the material comprises the following raw materials by mass: 5-20% of glass powder and 80-95% of K2Sr4Nb6O20-0.2Sc2O3. The glass powder includes the following raw materials by mass: 15-30% of Na2CO3, 5-20% of SiO2, 10-25% of KF, and 25-40% of H3BO3. The preparation methodis as follows: weighing the raw materials according to the stoichiometric ratio of the general formula K2Sr4Nb6O20-0.2Sc2O3 to obtain a frit A; mixing the glass powder B and the 80% of 95% of the frit A according to the mass percentage for ball milling, adding an adhesive, granulating, thermally incubating at 900 DEG C -950 DEG C for 1 hour, and cooling. The high dielectric low temperature co-fired ceramic dielectric material has a low sintering temperature, a high dielectric constant and a low dielectric loss, and can be co-fired with a high conductivity silver metal internal electrode.

Description

technical field [0001] The invention discloses a high-dielectric low-temperature co-fired ceramic dielectric material and a preparation method thereof, belonging to the technical field of ceramic dielectric materials. Background technique [0002] With the rapid development of modern electronic information technology, electronic circuits are developing in the direction of miniaturization, multi-function, light weight, low cost, integration and high frequency, which puts forward some new requirements for electronic components , requiring it to have high frequency, small size, high integration and high reliability. At present, the miniaturization and chipping of electronic components is an important symbol used to measure the development level of electronic components technology. In order to better adapt to the development needs of the modern electronic information technology industry, many new component integration technologies have emerged, such as low-temperature co-fired ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/626C04B35/64C03C6/04C03C6/06
CPCC03C1/00C04B35/495C04B35/62615C04B35/62645C04B35/62695C04B35/64C04B2235/3224C04B2235/36C04B2235/96
Inventor 张永刚
Owner TAIYUAN UNIV OF TECH
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