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A kind of low temperature co-fired ceramic dielectric material and preparation method thereof

A low-temperature co-firing ceramic and dielectric material technology, applied in the field of ceramic dielectric materials, can solve the problems of high sintering temperature, high loss, low dielectric constant, etc., and achieve low-temperature co-firing performance, low capacity temperature coefficient, and high dielectric constant. Effect

Active Publication Date: 2022-04-12
TAIYUAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are more low-temperature co-fired ceramic materials reported as BaO-TiO 2 , Ca(Li 1 / 3 Nb 2 / 3 )O 3-δ 、 Bi 2 o 3 -ZnO-Nb 2 o 5 / Ta 2 o 5 、BaO-Ln 2 o 3 -TiO 2 (Ln=Nd, Sm) and Pb 1-x Ca x (Fe 1 / 2 , Nb 1 / 2 )O 3 and other dielectric ceramic materials, but these ceramic materials have problems such as high sintering temperature, low dielectric constant and high loss

Method used

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  • A kind of low temperature co-fired ceramic dielectric material and preparation method thereof
  • A kind of low temperature co-fired ceramic dielectric material and preparation method thereof
  • A kind of low temperature co-fired ceramic dielectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0024] A low temperature co-fired ceramic dielectric material, comprising the following raw materials in mass percentage: glass powder 5%, Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti 4 o 12 95%, the glass powder includes the following raw materials in mass percentage: Li 2 CO 3 5%, ZnO30%, BaCO 3 30%, CaCO 3 30% and Kaolin 5%.

[0025] Its preparation process is as follows:

[0026] 1) The raw material CaCO 3 , La 2 o 3 , CuO, ZnO and TiO 2 According to the general formula Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti 4 o 12 , for batching, ball milling on a ball mill with a speed of 400r / min for 6 hours, in a 3.3kw ordinary oven, after drying at 100°C, pass through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at a rate of 5°C / min, and keep it at 1100°C for 3 hours to obtain frit A.

[0027] 2) Weigh Li 2 CO 3 5g, ZnO 30g, BaCO 3 30g, CaCO 3 30g, 5g of kaolin, mixed, molten water cooled, ground, sieved to obtain glass powder B.

[0028] 3) Perform secondar...

Embodiment 2

[0033]A low temperature co-fired ceramic dielectric material, comprising the following raw materials in mass percentage: glass powder 10%, Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti 4 o 12 90%, the glass powder includes the following raw materials in mass percentage: Li 2 CO 3 5%, ZnO5%, BaCO 3 30%, CaCO 3 30% and Kaolin 30%.

[0034] Its preparation process is as follows:

[0035] 1) The raw material CaCO 3 , La 2 o 3 , CuO, ZnO and TiO 2 According to the general formula Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti 4 o 12 , for batching, ball milling on a ball mill with a speed of 400r / min for 6 hours, in a 3.3kw ordinary oven, after drying at 100°C, pass through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at a rate of 5°C / min, and keep it at 1100°C for 2 hours to obtain frit A.

[0036] 2) Weigh Li 2 CO 3 5g, ZnO 5g, BaCO 3 30g, CaCO 3 30g, 30g of kaolin, mixed, molten water cooled, ground, sieved to obtain glass powder B.

[0037] 3) Perform secondar...

Embodiment 3

[0042] A low temperature co-fired ceramic dielectric material, comprising the following raw materials in mass percentage: glass powder 15%, Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti 4 o 12 85%, the glass powder includes the following raw materials in mass percentage: Li 2 CO 3 40%, ZnO20%, BaCO 3 20%, CaCO 3 10% and Kaolin 10%.

[0043] Its preparation process is as follows:

[0044] 1) The raw material CaCO 3 , La 2 o 3 , CuO, ZnO and TiO 2 According to the general formula Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti 4 o 12 , for batching, ball milling on a ball mill with a speed of 400r / min for 6 hours, in a 3.3kw ordinary oven, after drying at 100°C, pass through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at a rate of 8°C / min, and keep it at 1100°C for 4 hours to obtain frit A.

[0045] 2) Weigh Li 2 CO 3 40g, ZnO 20g, BaCO 3 20g, CaCO 3 10g, kaolin 10g, mixed, molten water cooling, grinding, sieving to obtain glass powder B.

[0046] 3) Perform se...

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Abstract

The invention discloses a low-temperature co-fired ceramic dielectric material and a preparation method thereof. The material includes the following raw materials in mass percentage: glass powder 5-20%, Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti4O 12 80‑95%. Described glass powder comprises the raw material of following mass percent: Li 2 CO 3 5‑40%, ZnO 5‑30%, BaCO 3 5‑30%, CaCO 3 5‑30% and Kaolin 5‑30%. The preparation method is as follows: the raw materials are weighed according to the stoichiometric ratio of the general formula, and the frit A is obtained; 5-20% glass powder B and 80-95% frit A are mixed and ball-milled according to the mass percentage, and the binder is added , granulation, heat preservation at 800-850°C for 1 hour, and cooling. The ceramic dielectric material has low sintering temperature, high dielectric constant and low dielectric loss, and can be co-fired with silver metal internal electrodes with high conductivity.

Description

technical field [0001] The invention discloses a low-temperature co-fired ceramic dielectric material and a preparation method thereof, belonging to the technical field of ceramic dielectric materials. Background technique [0002] Low-temperature co-fired ceramic technology is to mix ceramic powder with low sintering temperature and binder, and make a dense and precise green ceramic tape by casting method, and then cut the green ceramic tape into the required size The green ceramic sheet, and then make the required circuit pattern on the green ceramic sheet through mechanical punching or laser drilling, slurry filling, screen printing and other processes, and the capacitance, inductance, resistor, coupler, filter, impedance Passive components such as converters are embedded in it, and finally multi-layer green ceramic sheets are laminated together, sintered and molded at about 900°C to make passive integrated components or components, and active devices can also be mounted ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/462C04B35/653C04B35/64C03C12/00C03C6/02
CPCC04B35/462C04B35/653C04B35/64C03C12/00C03C1/00C04B2235/3208C04B2235/3227C04B2235/3284C04B2235/3281C04B2235/36C04B2235/6562C04B2235/6567C04B2235/96
Inventor 郭雅晶田剑锋周瑶瑶
Owner TAIYUAN NORMAL UNIV
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