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A kind of high dielectric X7r ceramic dielectric material and preparation method thereof

A ceramic dielectric and high dielectric technology, which is applied in the field of ceramic dielectric materials, can solve the problems of high sintering temperature, high loss, and low dielectric constant, and achieve high dielectric constant, low dielectric loss, and low temperature coefficient of capacity. Effect

Inactive Publication Date: 2021-12-28
TAIYUAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there are many kinds of X7R ceramic dielectric materials reported so far, these ceramic materials have problems such as high sintering temperature, low dielectric constant and high loss.

Method used

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  • A kind of high dielectric X7r ceramic dielectric material and preparation method thereof
  • A kind of high dielectric X7r ceramic dielectric material and preparation method thereof
  • A kind of high dielectric X7r ceramic dielectric material and preparation method thereof

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preparation example Construction

[0022] A preparation method of high dielectric X7R ceramic dielectric material, comprising the following steps:

[0023] (1) The raw material CaCO 3 , La 2 o 3 , CuO, ZnO, TiO 2 and according to the general formula Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 , carry out batching ball milling, heat up to 1000°C, keep warm for 2-4 hours, and obtain frit A;

[0024] (2) 5-25% Nd according to mass percentage 2 o 3 Carry out secondary batching with 75-95% frit A to obtain batching B;

[0025] (3) Ball mill ingredient B, add 5-8wt% binder of ingredient B to granulate, press into a green body, raise the temperature to 400-500°C, then raise the temperature to 1120°C-1150°C for 1 hour, and cool it to obtain High dielectric X7R ceramic dielectric material.

[0026] In the present invention, the binder added in step (3) will volatilize in the subsequent heating process, and the sintering process in step (3) of the present invention is mainly for the purpose of making the cerami...

Embodiment 1

[0043] Raw material CaCO 3 , La 2 o 3 , CuO, ZnO, TiO 2 and according to the general formula Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1000°C at 9°C / min, and keep it at 1000°C for 3 hours to obtain frit A.

[0044] For secondary batching, according to 95% frit A and 5% Nd 2 o 3 Mix evenly, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Separating sieve, adding 8wt% paraffin wax to granulate, pressing into a green body, first heating to 450°C at a heating rate of 2°C / min, and then heating to 1120°C at a heating rate of 10°C / min for firing, and holding for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0045] The test result (test frequency is 1KHz) of the dielectric p...

Embodiment 2

[0049] Raw material CaCO 3 , La 2 o 3 , CuO, ZnO, TiO 2 and according to the general formula Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1000°C at 10°C / min, and keep it at 1000°C for 3 hours to obtain frit A.

[0050] For secondary batching, according to 90% frit A and 10% Nd 2 o 3 Mix evenly, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Sieve the sample, add 8wt% paraffin to granulate, press into a green body, first heat to 450°C at a heating rate of 2°C / min, and then heat to 1130°C at a heating rate of 10°C / min for firing, and hold for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0051] The test result (test frequency is 1KHz) of above-mentioned embodiment dielec...

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Abstract

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X7R ceramic dielectric material and a preparation method thereof. It is composed of Nd with a mass percentage of 5‑25% 2 o 3 and 75‑95% Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 consist of. High dielectric X7R ceramic dielectric material provided by the present invention, Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 The dielectric ceramic has a moderate sintering temperature, generally around 1130°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention selects Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 system, take the addition of Nd 2 o 3 The method of doping modification makes it meet the performance X7R standard, and at the same time, it has the advantages of high dielectric constant, low dielectric loss, lead-free and environmental protection.

Description

technical field [0001] The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X7R ceramic dielectric material and a preparation method thereof. Background technique [0002] The multi-layer, slice, integration and multi-function of information functional ceramic components have become the mainstream of development. The integration of electronic information technology, miniaturization and intelligent development trends have promoted new changes in the assembly and use of electronic components, that is, plug-in to surface assembly, analog to digital, fixed to mobile, separation transition to integration. Chip capacitors, chip inductors and chip resistors are the three most widely used passive components, and have developed into a large-scale industrial group. Other chip electronic components with different functions, such as chip drivers, chip transformer groups, chip antennas, chip sensors and chip transducers, are also develo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B3/12C04B35/50C04B35/465
CPCC04B35/50C04B35/465C04B2235/3224C04B2235/442C04B2235/3281C04B2235/3284C04B2235/96
Inventor 郭雅晶马引群韩丙辰
Owner TAIYUAN NORMAL UNIV
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