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High-dielectric X7R ceramic dielectric material and preparation method thereof

A technology of ceramic dielectric and high dielectric, applied in the field of ceramic dielectric materials, can solve the problems of high sintering temperature, low dielectric constant and high loss, and achieve the effect of high dielectric constant, low dielectric loss and low capacity temperature coefficient

Inactive Publication Date: 2019-08-09
TAIYUAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there are many kinds of X7R ceramic dielectric materials reported so far, these ceramic materials have problems such as high sintering temperature, low dielectric constant and high loss.

Method used

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  • High-dielectric X7R ceramic dielectric material and preparation method thereof
  • High-dielectric X7R ceramic dielectric material and preparation method thereof
  • High-dielectric X7R ceramic dielectric material and preparation method thereof

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preparation example Construction

[0022] A preparation method of high dielectric X7R ceramic dielectric material, comprising the following steps:

[0023] (1) The raw material CaCO 3 , La 2 o 3 , CuO, ZnO, TiO 2 and according to the general formula Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 , carry out batching ball milling, heat up to 1000°C, keep warm for 2-4 hours, and obtain frit A;

[0024] (2) According to the mass percentage, 5-25% Nd 2 o 3 Carry out secondary batching with 75-95% frit A to obtain batching B;

[0025] (3) Ball mill ingredient B, add 5-8wt% binder of ingredient B to granulate, press into a green body, raise the temperature to 400-500°C, then raise the temperature to 1120°C-1150°C for 1 hour, and cool it to obtain High dielectric X7R ceramic dielectric material.

[0026] In the present invention, the binder added in step (3) will volatilize in the subsequent heating process, and the sintering process in step (3) of the present invention is mainly for the purpose of making the c...

Embodiment 1

[0043] Raw material CaCO 3 , La 2 o 3 , CuO, ZnO, TiO 2 and according to the general formula Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1000°C at 9°C / min, and keep it at 1000°C for 3 hours to obtain frit A.

[0044] For secondary batching, according to 95% frit A and 5% Nd 2 o 3 Mix evenly, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Separating sieve, adding 8wt% paraffin wax to granulate, pressing into a green body, first heating to 450°C at a heating rate of 2°C / min, and then heating to 1120°C at a heating rate of 10°C / min for firing, and holding for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0045] The test result (test frequency is 1KHz) of the dielectric p...

Embodiment 2

[0049] Raw material CaCO 3 , La 2 o 3 , CuO, ZnO, TiO 2 and according to the general formula Ca 0.95 La 0.05 Cu 2.55 Zn 0.5 Ti 4 o 12 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1000°C at 10°C / min, and keep it at 1000°C for 3 hours to obtain frit A.

[0050] For secondary batching, according to 90% frit A and 10% Nd 2 o 3 Mix evenly, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Sieve the sample, add 8wt% paraffin to granulate, press into a green body, first heat up to 450°C at a heating rate of 2°C / min, then heat to 1130°C at a heating rate of 10°C / min for firing, and keep warm for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0051] The test result (test frequency is 1KHz) of above-mentioned embodiment di...

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Abstract

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X7R ceramic dielectric material and a preparation method thereof. The material is prepared from,by mass, 5-25% of Nd2O3 and 75-95% of Ca0.95La0.05Cu2.55Zn0.5Ti4O12. According to the high-dielectric X7R ceramic dielectric material, Ca0.95La0.05Cu2.55Zn0.5Ti4O12 dielectric ceramics have a moderatesintering temperature which is always about 1130 DEG C, and are high in dielectric constant, adjustable in capacity temperature coefficient and low in loss. The material is a dielectric ceramic material with excellent performance. A Ca0.95La0.05Cu2.55Zn0.5Ti4O12 system is selected, and the method of adding Nd2O3 for doping and modification is utilized, so that the material has the advantages of being high in dielectric constant, low in dielectric loss, free of lead and environmentally friendly while the performance X7R standard is met.

Description

technical field [0001] The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X7R ceramic dielectric material and a preparation method thereof. Background technique [0002] The multi-layer, slice, integration and multi-function of information functional ceramic components have become the mainstream of development. The integration of electronic information technology, miniaturization and intelligent development trends have promoted new changes in the assembly and use of electronic components, that is, plug-in to surface assembly, analog to digital, fixed to mobile, separation transition to integration. Chip capacitors, chip inductors and chip resistors are the three most widely used passive components, and have developed into a large-scale industrial group. Other chip electronic components with different functions, such as chip drivers, chip transformer groups, chip antennas, chip sensors and chip transducers, are also develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/50C04B35/465
CPCC04B35/50C04B35/465C04B2235/3224C04B2235/442C04B2235/3281C04B2235/3284C04B2235/96
Inventor 郭雅晶马引群韩丙辰
Owner TAIYUAN NORMAL UNIV
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