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High-dielectric X8R ceramic dielectric material and preparation method thereof

A ceramic dielectric and high dielectric technology, applied in the field of ceramic dielectric materials, can solve the problems of high sintering temperature, low dielectric constant and high loss, and achieve the effect of high dielectric constant, high dielectric constant and low dielectric loss

Active Publication Date: 2018-12-25
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, more X8R ceramic capacitor materials are reported, including tungsten bronze structure ceramic system, lead-based relaxor ferroelectric ceramic system and BaTiO 3 The base ferroelectric ceramic system is a dielectric ceramic material, but these ceramic materials contain a large amount of heavy metal lead, high sintering temperature, low dielectric constant and high loss.

Method used

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  • High-dielectric X8R ceramic dielectric material and preparation method thereof
  • High-dielectric X8R ceramic dielectric material and preparation method thereof
  • High-dielectric X8R ceramic dielectric material and preparation method thereof

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preparation example Construction

[0025] A preparation method of high dielectric X8R ceramic dielectric material, comprising the following steps:

[0026] (1) the raw material K 2 CO 3 , SrCO 3 and Nb 2 o 5 According to formula K 2 Sr 4 Nb 6 o 20 , carry out batching ball milling, heat up to 1100°C, keep warm for 2-4 hours, and obtain frit A;

[0027] (2) According to the mass percentage, 5-20% Sc 2 o 3 Carry out secondary batching with 80-95% frit A to obtain batching B;

[0028] (3) Ball mill ingredient B, add 5-8wt% binder of ingredient B to granulate, press into a green body, raise the temperature to 400-500°C, then raise the temperature to 1220°C-1250°C for 1 hour, and cool it to obtain High dielectric X8R ceramic dielectric material.

[0029] In the present invention, the binder added in step (3) will volatilize in the subsequent heating process, and the sintering process in step (3) of the present invention is mainly for the purpose of making the ceramic dielectric material dense.

[0030] ...

Embodiment 1

[0046] K 2 CO 3 , SrCO 3 and Nb 2 o 5 According to formula K 2 Sr 4 Nb 6 o 20 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at 5°C / min, and keep the temperature at 1100°C for 3 hours to obtain frit A.

[0047] For secondary batching, follow 95% frit A and 5% Sc 2 o 3 Mix evenly, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Sieve the sample, add 8wt% paraffin to granulate, press into a green body, first heat up to 450°C at a heating rate of 2°C / min, then heat to 1220°C at a heating rate of 10°C / min for firing, and keep warm for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0048] The test result (test frequency is 1KHz) of the dielectric property of above-mentioned embodiment ceramic dielectric material...

Embodiment 2

[0052] K 2 CO 3 , SrCO 3 and Nb 2 o 5 According to formula K 2 Sr 4 Nb 6 o 20 , for batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, and passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1100°C at 5°C / min, and keep the temperature at 1100°C for 3 hours to obtain frit A.

[0053] For secondary batching, according to 90% frit A and 10% Sc 2 o 3 Mix evenly, add deionized water, mill on a ball mill at a speed of 400r / min for 8 hours, dry at 120°C, pass through 250 holes / cm 2 Sieve the sample, add 8wt% paraffin wax to granulate, press into a green body, first heat up to 450°C at a heating rate of 2°C / min, then heat to 1230°C at a heating rate of 10°C / min for firing, and keep warm for 1 hour. After cooling, a ceramic dielectric material is obtained.

[0054] The test result (test frequency is 1KHz) of above-mentioned embodiment dielectric property sees table 2 and figu...

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Abstract

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X8R ceramic dielectric material and a preparation method thereof. The material consists of the following components in percentage by weight: 5-20 % of Sc2O3 and 80-95 % of K2Sr4Nb6O20. According to the high-dielectric X8R ceramic dielectric material provided by the invention, the K2Sr4Nb6O20 series of dielectric ceramic has moderate sintering temperature which is generally around 1250 DEG C, has relatively high dielectric constant, adjustable capacity temperature coefficient and low loss, andis a dielectric ceramic material with excellent performance. A K2Sr4Nb6O20 system is selected, and a doping modification method of adding the Sc2O3 is adopted, so that the K2Sr4Nb6O20 system meets the performance X8R standard, and has the advantages of high dielectric constant, low dielectric loss, lead-free and environment-friendly.

Description

technical field [0001] The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X8R ceramic dielectric material and a preparation method thereof. Background technique [0002] With the development of integrated circuits, electronic communication equipment terminals are developing towards miniaturization. Chip multilayer ceramic capacitors can well adapt to this trend, and thus have been widely used. And with the development of technology, its superior performance is becoming more and more obvious, and there is a tendency to gradually replace tantalum capacitors and electrolytic capacitors. The world's annual market sales are hundreds of billions, widely used in various surface mount circuits of electronic information products [0003] The military and aerospace fields have always been the main battlefield for advanced countries to demonstrate their strength, and it is also the place where high and new technologies are first appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495
CPCC04B35/495C04B2235/3224C04B2235/442C04B2235/96
Inventor 张永刚张永强
Owner TAIYUAN UNIV OF TECH
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