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Low-temperature co-fired ceramic dielectric material and preparation method thereof

A technology of low-temperature co-fired ceramics and dielectric materials, which is applied in the field of substrate materials for communication components, can solve the problems of high sintering temperature, low bending strength, and low thermal conductivity, and achieve high thermal conductivity, low dielectric constant, high intensity effect

Active Publication Date: 2019-01-15
TAIYUAN NORMAL UNIV
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  • Description
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Problems solved by technology

[0004] At present, many ceramic substrate materials are reported, mainly including lead borosilicate glass + Al2O3, boron Silicate glass+AlN, CaO-B2O3-SiO2glass-ceramic and MgO-Al2 Sub>O3-SiO2 ceramic materials such as glass ceramics, but these ceramic materials have high sintering temperature, low bending strength, low thermal conductivity and high loss, etc. question

Method used

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  • Low-temperature co-fired ceramic dielectric material and preparation method thereof
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  • Low-temperature co-fired ceramic dielectric material and preparation method thereof

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Embodiment Construction

[0025] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail in combination with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. The technical solutions of the present invention will be described in detail below in conjunction with the examples, but the scope of protection is not limited thereto.

[0026] The first set of examples

[0027] Raw material Al 2 o 3 , Nb 2 o 5 and ZnO according to the general formula xAl 2 o 3 -2Nb 2 o 5 -ZnO, where x=4, batching, ball milling on a ball mill with a rotating speed of 400r / min for 6 hours, drying in a 3.3kw ordinary oven at 100°C, passing through 250 holes / cm 2 Sieve the sample, raise the temperature to 1050°C at 7°C / min, and keep the temperature at 1050°C for 3 hours to o...

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Abstract

The invention discloses a low-temperature co-fired ceramic dielectric material and a preparation method thereof and relates to a substrate material of a communication component. The ceramic dielectricmaterial comprises 40-50% by weight of glass powder and 50-60% by weight of xAl2O3-2Nb2O5-ZnO, wherein x is in a range of 4-7; the glass powder is composed of CaCO3, SiO2, LiF and H3BO3. According tothe invention, an Al2O3-2Nb2O5-ZnO system is selected, then the glass powder is added as a sintering aid, and the sintering manner of heating to 400-500 DEG C and then to 850-900 DEG C and preservingheat for 0.5-1.5 hours is adopted; and thus, the a ceramic dielectric is obtained after cooling. The sintered ceramic substrate material of the invention has a complex chemical and crystal structure;the sintering temperature of the material is allowed to be lower than 1,000 DEG C via the method of the invention; and the ceramic dielectric material with a low dielectric constant, low dielectric loss, high strength and high thermal conductivity is formed at the same time.

Description

technical field [0001] The invention relates to a communication component substrate material, especially a ceramic substrate dielectric material, specifically a low-temperature co-fired ceramic dielectric material with high thermal conductivity and high strength and a preparation method thereof. Background technique [0002] With the rapid development of the integrated circuit industry, electronic components tend to be short, thin, and high-performance, and integrated circuits are also developing towards high integration, high frequency, and ultra-high number of terminals. The components on it maintain a good match in terms of electrical properties, physical properties, and chemical properties. It must have high resistivity, high thermal conductivity, low dielectric constant and low dielectric loss, and at the same time have a thermal expansion coefficient that matches silicon and excellent mechanical strength, and it is easy to form, easy to process, and low in cost. [00...

Claims

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Application Information

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IPC IPC(8): C04B35/10C04B35/495C03C6/06C03C6/04
CPCC03C1/00C04B35/10C04B35/495C04B2235/3222C04B2235/36C04B2235/3284
Inventor 郭雅晶闫映策王志梅
Owner TAIYUAN NORMAL UNIV
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