Correction method of optical projection system
A technology of optical projection and optical lens, applied in optics, photography, optomechanical equipment, etc., can solve problems such as low correction efficiency and impact on production capacity, and achieve high correction efficiency and increase production capacity
Inactive Publication Date: 2019-08-09
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology
[0005] However, the correction efficiency of the existing correction method is low and affects the normal production capacity
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[0019] As mentioned in the background, the correcting method of the existing optical projection system has low correcting efficiency and affects the normal production capacity.
[0020] A correction method for an optical projection system, comprising: providing an optical projection system, the optical projection system is suitable for exposing a wafer, the optical projection system includes an optical lens system; using an interferometer to detect phase difference information of the optical lens system; The optical lens system is adjusted according to the phase difference information until the phase difference information is within the threshold range, that is, the wavefront distortion can be compensated by adjusting some lenses in the optical lens system, so that the optical lens system is in a relatively ideal working state.
[0021] However, since the interferometer detects the phase difference information of the optical lens system, the normal exposure process needs to be ...
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The invention relates to a correction method of an optical projection system. The method comprises steps that a mask is respectively subjected to a first exposure to an Nth exposure through using theoptical projection system to obtain a first exposure mark pattern to an Nth exposure mark pattern, and the exposure conditions include exposure energy and depth of focus; a focus energy matrix function is obtained according to the size of the first exposure mark pattern to the size of the Nth exposure mark pattern and the exposure conditions of the first exposure to the Nth exposure, and the focusenergy matrix function is a function of the size of the exposure mark pattern with respect to the exposure energy and the depth of focus; an exposure energy extremum is obtained in the focus energy matrix function; a test slope of the size of the exposure mark pattern changing along with the depth of focus is obtained under the exposure energy extremum conditions; an optical lens system is adjusted based on the test slope. The correction method and the optical projection system are compatible with the wafer exposure process, and correction efficiency and capacity are improved.
Description
technical field [0001] The invention relates to the field of semiconductor detection, in particular to a correction method for an optical projection system. Background technique [0002] The optical projection system is a kind of equipment that is often used in the semiconductor process, such as a photolithography machine. The optical projection system includes a light source, an optical lens system and a mask, and the mask is located between the light source and the optical lens system. When the surface of the wafer needs to be patterned, a photoresist layer is formed on the surface of the wafer. After that, the wafer is placed on the bottom of the optical lens system, and the light emitted by the light source passes through the mask plate and the optical lens system in turn. The photoresist layer is irradiated to expose the photoresist layer. After the photoresist layer is developed, an exposure pattern is formed in the photoresist layer. After the wafer is etched with th...
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Login to View More IPC IPC(8): G03B21/14G03F7/20
CPCG03B21/142G03F7/70141
Inventor 张祥平相马春木许刚周娴
Owner HUAIAN IMAGING DEVICE MFGR CORP