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Metal interconnection structure and forming method thereof

A metal interconnection structure and metal technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems that the performance of devices cannot meet the needs of products, copper is easy to diffuse, etc.

Inactive Publication Date: 2019-08-09
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, copper diffuses very easily in silicon (Si) or silicon dioxide (SiO2)
In semiconductor devices using copper interconnection technology, the diffusion effect of copper will cause some performance of the device to fail to meet the needs of the product

Method used

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  • Metal interconnection structure and forming method thereof
  • Metal interconnection structure and forming method thereof
  • Metal interconnection structure and forming method thereof

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Embodiment Construction

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0030] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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PUM

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Abstract

The invention relates to a metal interconnection structure forming method. The method comprises the following steps: depositing a first metal layer; depositing a tantalum nitride layer in a connectionarea of the first metal layer, and enabling at least part of tantalum nitride on the surface of the tantalum nitride layer to be of a body-centered cubic structure; depositing a tantalum layer on thesurface of the tantalum nitride layer, wherein metal tantalum in the tantalum layer is alpha-phase tantalum; and depositing a second metal layer on the tantalum layer.

Description

technical field [0001] The invention relates to a method for forming a metal interconnection structure, which can reduce the contact resistance of the metal interconnection and improve the reliability of the metal interconnection structure. Background technique [0002] In the field of semiconductor integrated circuits, it is often necessary to deposit metal thin films on integrated circuit chips, and form wiring through photolithography technology, and interconnect mutually isolated components to form required circuits according to certain requirements. In order to meet the requirements of the integrated circuit interconnection (Interconnect) process, the interconnection metal needs to have a lower resistivity and form a good low-ohmic contact with the components. In addition, the adhesion of the interconnection metal material also needs to meet certain requirements in order to facilitate deposition and photolithography processing to form wiring. [0003] The traditional m...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/532H01L23/538
CPCH01L21/76826H01L21/7685H01L23/53266H01L23/5329H01L23/5384
Inventor 孙祥烈吕术亮马亮李远黄驰万先进
Owner YANGTZE MEMORY TECH CO LTD