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Method for measuring metal etching end point of metal layer of thin film transistor substrate

A thin-film transistor and metal etching technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of low accuracy of metal etching endpoints, and achieve stable properties, high accuracy, and improved accuracy.

Inactive Publication Date: 2019-08-20
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides a method for measuring the metal etching end point of the metal layer of the thin film transistor substrate to solve the problem of low accuracy in the prior art of identifying the metal etching end point with human eyes

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  • Method for measuring metal etching end point of metal layer of thin film transistor substrate
  • Method for measuring metal etching end point of metal layer of thin film transistor substrate
  • Method for measuring metal etching end point of metal layer of thin film transistor substrate

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Embodiment Construction

[0040] The first embodiment of the method for measuring the metal etching end point of the metal layer of the thin film transistor (Thin Film Transistor, TFT) substrate of the present invention: select platinum or carbon as the current collector to measure the metal etching end point (End Point) of the copper layer 30 of the TFT substrate Determination, EPD).

[0041] Due to the structure of the TFT substrate or similar barrier layer / conductive layer / PR (Photoresist) layer, the electrochemical current itself in the etching process has certain characteristics, such as figure 1 shown.

[0042] Please refer to figure 1 The first embodiment of the method for measuring the metal etching end point of the thin film transistor substrate metal layer of the present invention includes the following steps: substrate providing step S101, metal etching initial step S102, first metal etching step S103, second metal etching step S104, and current Detection step S105.

[0043] Please refer ...

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Abstract

The invention discloses a method for measuring a metal etching end point of a metal layer of a thin film transistor substrate. The method comprises a substrate supplying step, a metal etching initialstep, a first metal etching step, a second metal etching step and a current detecting step. The metal etching end point can be accurately detected by detecting the current change of a current collector layer on the substrate.

Description

technical field [0001] The present invention relates to a measurement method, in particular to a measurement method of the metal etching end point of the metal layer of the thin film transistor substrate, which is not disturbed by factors such as the color of the solution and the visual recognition ability of the personnel implementing the measurement method. Background technique [0002] In the thin film transistor (Thin Film Transistor, TFT) field, the determination of the metal etching endpoint (End Point Determination, EPD) of the glass / metal structure is mainly determined by a visual method during the etching process. The method is to use the color difference of copper and molybdenum and the color of transparent glass to judge the EPD, and there is interference of the solution color and the influence of different observers and observation habits in the etching solution, and the human eye observation itself will There is a certain delay. [0003] In a multilayer metal s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 梅园李金城
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD