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Field effect transistor applied to high-sensitivity gas sensor

A field-effect transistor and gas sensor technology, which is applied in the field-effect transistor field of high-sensitivity gas sensors, can solve the problem that the application of chemical gate structures is rarely reported, and achieves the effects of high sensitivity, high stability and good stability.

Inactive Publication Date: 2019-08-30
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the application of chemical gate structures in 2D material FETs is rarely reported

Method used

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  • Field effect transistor applied to high-sensitivity gas sensor
  • Field effect transistor applied to high-sensitivity gas sensor
  • Field effect transistor applied to high-sensitivity gas sensor

Examples

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the examples.

[0018] Such as figure 1 As shown, the field effect transistor applied to the high-sensitivity gas sensor of the present invention includes a conductive channel, a source region, a drain region, a gate oxide layer, a source electrode, a drain electrode, and a gate; the conductive channel is composed of three layers of vertical Heterostructure composition, from bottom to top is WSe 2 , BN, BP; the upper and lower surfaces of the conductive channel are respectively provided with a gate oxide layer; the outer surface of the gate oxide layer is deposited with a metal electrode by an atomic deposition method as a gate.

[0019] Such as figure 2 Shown is a schematic diagram of a longitudinal cross-section of a conductive channel. The channel adopts a three-layer vertical heterogeneous structure composed of three materials, and the three materials are all two-dimensional struc...

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Abstract

The invention discloses a field effect transistor applied to a high-sensitivity gas sensor. The field effect transistor comprises a conducting channel, a source region, a drainage region, grid electrode oxidation layers, a source electrode, a drainage electrode and a grid electrode, wherein the conducting channel consists of three layers of longitudinal heterostructures, including WSe2, BN (BoronNitride) and BP (Black Phosphorus), from bottom to top in sequence; the upper surface and the lower surface of the conducting channel are independently provided with a grid electrode oxidation layer;and a metal electrode is precipitated on the outer surface of the grid electrode oxidation layer to serve as the grid electrode. The field effect transistor is used for the gas sensor, and is high insensitivity and good in stability.

Description

technical field [0001] The invention relates to a field effect transistor, in particular to a field effect transistor applied to a high-sensitivity gas sensor. Background technique [0002] Atomically thin two-dimensional (2D) materials are ideal gas-sensing materials to achieve ultra-low detection limits due to high surface area ratio, low electronic noise and tunable Fermi level sensitivity. However, the sensitivity of 2D materials to the surrounding environment may also seriously reduce the long-term stability of sensing devices due to the fact that most of them use thin sheets of 2D materials identical to sensing materials and conducting materials. [0003] One of the most promising application areas of 2D materials is in the field of gas sensing. The mechanism is usually based on the charge transfer between the gas molecules and the 2D material to change the resistance of the 2D material. The high surface-to-volume ratio and carrier mobility of 2D materials lead to ul...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/4141G01N27/4146
Inventor 渠开放江斌程庆苏李桂华吉娜王伟
Owner NANJING UNIV OF POSTS & TELECOMM