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Two-dimensional Ga2S3 nanosheet-based bendable field-effect photoelectric transistor and preparation method thereof

A technology of phototransistors and nanosheets, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of peeling preparation, uncontrollable morphology and agglomeration of crystals, etc., to achieve improved photoelectric response performance, considerable economic benefits, time-saving and high efficiency consumption effect

Pending Publication Date: 2019-09-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, similarly bendable and flexible 2D Ga 2 S 3 The base field effect phototransistor has not been reported yet, and the technical difficulty lies in the Ga 2 S 3 Synthesis method of nanosheets and two-dimensional Ga 2 S 3 The transfer process of Ga 2 S 3 , but usually some agglomerated crystals with uncontrollable morphology are obtained, which are difficult to be mechanically exfoliated to prepare large-area two-dimensional Ga 2 S 3 Nanosheets

Method used

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  • Two-dimensional Ga2S3 nanosheet-based bendable field-effect photoelectric transistor and preparation method thereof
  • Two-dimensional Ga2S3 nanosheet-based bendable field-effect photoelectric transistor and preparation method thereof
  • Two-dimensional Ga2S3 nanosheet-based bendable field-effect photoelectric transistor and preparation method thereof

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Embodiment 1

[0044] Based on the two-dimensional Ga of this embodiment 2 S 3 The bendable field-effect phototransistor of nanosheets from bottom to top, including PET substrate, two-dimensional Ga 2 S 3 Nanosheets, source, drain and gate electrodes.

[0045] The two-dimensional Ga 2 S 3 The number of nanosheet layers is 1, and the thickness is 5 nm; the source and drain electrodes are Ti metal layer and Au metal layer stacked sequentially from bottom to top, with thicknesses of 20 nm and 60 nm respectively; the gate electrode is stacked sequentially from bottom to top The Ni metal layer and the Au metal layer of the metal layer have a thickness of 50 nm and 100 nm, respectively; the length, width, and spacing of the source and drain electrodes correspond to 80 nm, 80 nm, and 300 nm; the length and width of the gate electrode are respectively 80nm and 80nm.

[0046] Its preparation method comprises the following steps:

[0047] (1) Clean the Si substrate to remove surface residues an...

Embodiment 2

[0066] Based on the two-dimensional Ga of this embodiment 2 S 3 The bendable field-effect phototransistor of nanosheets from bottom to top, including PDMS substrate, two-dimensional Ga 2 S 3 Nanosheets, source, drain and gate electrodes.

[0067] The two-dimensional Ga 2 S 3 The number of nanosheet layers is 3 layers, and the thickness is 7 nm; the source and drain electrodes are Ti metal layer and Au metal layer stacked sequentially from bottom to top, with thicknesses of 25 nm and 70 nm respectively; the gate electrode is stacked sequentially from bottom to top The Ni metal layer and the Au metal layer of the metal layer have a thickness of 40 nm and 80 nm, respectively; the length, width, and spacing of the source and drain electrodes are 90 nm, 60 nm, and 360 nm, respectively; the length and width of the gate electrode are 100 nm, respectively. nm and 60 nm.

[0068] Its preparation method comprises the following steps:

[0069] (1) Clean the Si substrate, remove th...

Embodiment 3

[0087] Based on the two-dimensional Ga of this embodiment 2 S 3 The bendable field-effect phototransistor of nanosheets from bottom to top, including ITO substrate, two-dimensional Ga 2 S 3 Nanosheets, source, drain and gate electrodes.

[0088] The two-dimensional Ga 2 S 3 The number of nanosheet layers is 2 layers, and the thickness is 6 nm; the source and drain electrodes are Ti metal layer and Au metal layer stacked sequentially from bottom to top, with thicknesses of 30 nm and 80 nm respectively; the gate electrode is stacked sequentially from bottom to top The Ni metal layer and the Au metal layer of the metal layer have a thickness of 45 nm and 90 nm respectively; the length, width and spacing of the source and drain electrodes are 100 nm, 70 nm and 340 nm respectively; the length and width of the gate electrode are respectively 90nm and 70nm.

[0089] Its preparation method comprises the following steps:

[0090] (1) Clean the Si substrate, remove the surface re...

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Abstract

The invention discloses a two-dimensional Ga2S3 nanosheet-based bendable field-effect photoelectric transistor and a preparation method thereof. The bendable field-effect photoelectric transistor sequentially comprises a flexible substrate and the two-dimensional Ga2S3 nanosheet from bottom to top, wherein a source electrode, a drain electrode and a grid electrode are arranged above the two-dimensional Ga2S3 nanosheet; and the grid electrode is arranged between the source electrode and the drain electrode. The invention provides a method for direct epitaxial growth of a large-area Ga2S3 material on a SiO2 / Si substrate by a CVD method; then the flexible bendable field-effect photoelectric transistor is prepared through mechanical stripping and transferring; and the preparation method has the characteristics of simple process, time saving, high efficiency and low energy consumption, and is beneficial to large-scale production. The field-effect photoelectric transistor can be applied to the fields of intelligent wearing, bending display, industrial automatic control, visible light communication and the like, and is considerable in economic benefit.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, relates to a semiconductor device and a preparation process thereof, in particular to a two-dimensional Ga 2 S 3 A bendable field-effect phototransistor of nanosheets and a preparation method thereof. Background technique [0002] Flexible, bendable, and foldable semiconductor microelectronic devices will bring changes to future smart wearables, curved displays, and implantable devices due to their light weight, flexibility, intelligence, and high efficiency. Among many microelectronic devices, field-effect phototransistors have received special attention from many researchers around the world in the past few decades because of their great application potential in various fields such as logic circuits, industrial automatic control, visible light communication, and infrared imaging. focus on. The key technical difficulty in realizing flexible field-effect phototransistors lies in the two-...

Claims

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Application Information

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IPC IPC(8): H01L31/112H01L31/0392H01L31/032H01L31/0352H01L31/18
CPCH01L31/112H01L31/03926H01L31/032H01L31/035209H01L31/1896Y02P70/50
Inventor 李国强郑昱林王文樑
Owner SOUTH CHINA UNIV OF TECH
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