Preparation method of warping-adjustable SiC-based HEMT structure and structure

A warpage and substrate technology, applied in the field of preparation of SiC-based HEMT structures, can solve the problems of limited control range and inflexibility, and achieve the effect of increasing or reducing stress in a wide range

Active Publication Date: 2019-09-13
JIANGSU CORENERGY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are many ways to control the warpage of SiC-based heterogeneous epitaxy in the industry, such as debugging the underlying buffer, etc., but these methods have limited control range and are not flexible enough.

Method used

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Embodiment Construction

[0026] The technical solutions of the present invention will be clearly and completely described below, and obviously, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The orientation or positional relationship indicated is only for the convenience of describing the present invention and simplifies the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation on the present invention. li...

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Abstract

The invention relates to a preparation method of a warping-adjustable SiC-based HEMT structure. The method comprises the following steps: a first buffer layer is grown on an SiC-based substrate; a second buffer layer is grown on the first buffer layer; a barrier layer is grown on the second buffer layer; the method is characterized in that an AlGaN insertion layer is grown on the first buffer layer before the second buffer layer is grown on the first buffer layer; the second buffer layer is grown on the AlGaN insertion layer; the growth thickness of the AlGaN insertion layer is 5-100 nm; and the content of Al in the AlGaN insertion layer is 5-50%. According to the method, flexible control of epitaxial warping of an SiC-based HEMT is successfully realized by introducing the AlGaN insertionlayer; and the epitaxial stress of the SiC-based HEMT can be flexibly enhanced or weakened in a large range by controlling the thickness of AlGaN or the content of Al.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a preparation method and structure of a SiC-based HEMT structure with adjustable warpage. Background technique [0002] HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) is a heterojunction field effect transistor, which is widely used in various electrical appliances. The HEMT epitaxial structure is the basis for preparing HEMT devices. A current HEMT epitaxial structure includes a substrate and sequentially grown on the substrate such as a nucleation layer, a buffer layer, a barrier layer, a capping layer, etc., where the substrate can be silicon carbide substrate, sapphire substrate or single crystal silicon substrate, etc. [0003] At present, there are many methods for warpage control of SiC-based heterogeneous epitaxy in the industry, such as debugging the underlying buffer, etc., but these methods have limited control range and are not flexible enou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335H01L29/06H01L29/778
CPCH01L29/66462H01L29/7787H01L29/0684
Inventor 李仕强王东盛李亦衡张葶葶朱廷刚
Owner JIANGSU CORENERGY SEMICON CO LTD
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