Preparation method of warping-adjustable SiC-based HEMT structure and structure

Abstract

The invention relates to a preparation method of a warping-adjustable SiC-based HEMT structure. The method comprises the following steps: a first buffer layer is grown on an SiC-based substrate; a second buffer layer is grown on the first buffer layer; a barrier layer is grown on the second buffer layer; the method is characterized in that an AlGaN insertion layer is grown on the first buffer layer before the second buffer layer is grown on the first buffer layer; the second buffer layer is grown on the AlGaN insertion layer; the growth thickness of the AlGaN insertion layer is 5-100 nm; and the content of Al in the AlGaN insertion layer is 5-50%. According to the method, flexible control of epitaxial warping of an SiC-based HEMT is successfully realized by introducing the AlGaN insertionlayer; and the epitaxial stress of the SiC-based HEMT can be flexibly enhanced or weakened in a large range by controlling the thickness of AlGaN or the content of Al.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a preparation method and structure of a SiC-based HEMT structure with adjustable warpage. Background technique [0002] HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) is a heterojunction field effect transistor, which is widely used in various electrical appliances. The HEMT epitaxial structure is the basis for preparing HEMT devices. A current HEMT epitaxial structure includes a substrate and sequentially grown on the substrate such as a nucleation layer, a buffer layer, a barrier layer, a capping layer, etc., where the substrate can be silicon carbide substrate, sapphire substrate or single crystal silicon substrate, etc. [0003] At present, there are many methods for warpage control of SiC-based heterogeneous epitaxy in the industry, such as debugging the underlying buffer, etc., but these methods have limited control range and are not flexible enou...

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Problems solved by technology

[0003] At present, there are many ways to control the warpage of SiC-based heterogeneous epitaxy in the industry, such as debugging the underlying buffer, etc., but these methods have limited control range and are not flexible enough.