A kind of preparation method and structure of warp-adjustable sic-based hemt structure

Abstract

The invention relates to a preparation method of a warp-adjustable SiC-based HEMT structure, which comprises growing a first buffer layer on a SiC-based substrate, growing a second buffer layer on the first buffer layer, and growing a second buffer layer on the first buffer layer. A barrier layer is grown on the second buffer layer, characterized in that: before the second buffer layer is grown on the first buffer layer, an AlGaN insertion layer is grown on the first buffer layer, and the first buffer layer is grown on the AlGaN insertion layer. The second buffer layer is grown on the AlGaN insertion layer, the growth thickness of the AlGaN insertion layer is 5-100 nm, and the Al composition in the AlGaN insertion layer is 5%-50%. The invention successfully realizes flexible control of SiC-based HEMT epitaxial warpage by introducing an AlGaN insertion layer, and can flexibly realize large-scale enhancement or weakening of SiC-based HEMT epitaxy stress by controlling the thickness or Al composition of AlGaN.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a preparation method and structure of a warp-adjustable SiC-based HEMT structure. Background technique [0002] HEMT (High Electron Mobility Transistor, high electron mobility transistor) is a heterojunction field effect transistor, which is widely used in various electrical appliances. The HEMT epitaxial structure is the basis for preparing HEMT devices. The current HEMT epitaxial structure includes a substrate and sequentially grown on the substrate, such as a nucleation layer, a buffer layer, a barrier layer, a cap layer, etc., wherein the substrate can be silicon carbide substrate, sapphire substrate or single crystal silicon substrate, etc. [0003] At present, there are various methods for warpage control of SiC-based heteroepitaxy in the industry, such as debugging the underlying buffer, etc., but these methods have limited control range and are not flexible enough. SUMMAR...

AI Technical Summary

Problems solved by technology

[0003] At present, there are many ways to control the warpage of SiC-based heterogeneous epitaxy in the industry, such as debugging the underlying buffer, etc., but these methods have limited control range and are not flexible enough.