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Photoelectric detector

A photodetector and electrode technology, applied in the field of photodetectors, can solve problems such as increased difficulty

Active Publication Date: 2019-09-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when making this kind of absorber, it is necessary to use the already very complicated electron beam etching technology to carry out patterning at the micro-nano level, thus increasing the difficulty of production.
At the same time, ohmic losses in this absorber metal structure create parasitic absorption

Method used

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  • Photoelectric detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] An embodiment of the present invention provides a photodetector, such as figure 1 As shown, it includes an absorber and an electrode layer, wherein the absorber includes a substrate layer 11, a reflective layer 12, and an absorbing layer 13 from bottom to top, and the electrode layer includes a first electrode 21 and a second electrode 22, so Both the first electrode 21 and the second electrode 22 are disposed on the absorption layer 13 .

[0032] Here, the material of the substrate layer 11 is generally silicon oxide.

[0033] The reflective layer 12 is grown on the substrate layer 11 by ion sputtering or template removal method, and the material of the reflective layer 12 is gold or silver. Specifically, when used, the thickness of the reflective layer 12 is 50 ~100nm. In this way, the thickness of the reflective layer is large enough to reflect all the light, so that it continues to propagate in the absorbing layer and gradually attenuates.

[0034] The absorbing ...

Embodiment 2

[0046] Specifically, the preparation method of the photodetector includes:

[0047] Step 1: providing the substrate layer made of silicon oxide;

[0048] Step 2: growing a reflective layer made of gold on the substrate layer by ion sputtering, with a thickness of 50 nm;

[0049] Step 3: 1 g of ethylenediaminetetraacetic acid (EDTA) and 1 g of polyethyleneimine (PEI) were mixed and dissolved in 30 mL of deionized water to form a solution;

[0050] Step 4: in described solution, add 2g ammonium molybdate ((NH 4 ) 6 Mo 7 o 24 4H 2 O) forming a homogeneous polymer precursor;

[0051] Step 5: Stir the homogeneous polymer precursor and perform ultrafiltration, the molecular weight is less than 10000g mol -1 ;

[0052] Step 6: spin-coat the obtained precursor solution on the reflective layer to obtain a film containing molybdenum, the spin-coating speed is 8000rpm, and the spin-coating time is 30s;

[0053]Step 7: Put the film into the center of the quartz tube in the tube f...

Embodiment 3

[0061] Further, compared with Example 2, in this Example 3, the parameter settings in step 2 are modified. Specifically, a layer of the reflective layer made of silver is grown on the substrate layer by ion sputtering, and the thickness is 50nm.

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Abstract

The embodiment of the invention provides a photoelectric detector, and the detector comprises an absorber. The absorber sequentially comprises a substrate layer, a reflecting layer and an absorbing layer from bottom to top, wherein the absorbing layer is a transition metal sulfide film; an electrode layer is arranged on the absorbing layer; therefore, the reflecting layer, the absorbing layer and the electrode layer are sequentially arranged on the substrate layer, and the absorption layer of the absorber is made of transition metal sulfide, so that the absorber can work in a visible wave band, a high-loss thin film can be formed through the fact that a real part and an imaginary part of the complex refractive index of the transition metal sulfide are closer, and the incident light is propagated in the thin film after being absorbed and gradually lost. Therefore, the ultrathin film structure of the absorbing layer on the reflecting layer can achieve nearly perfect absorption through critical coupling with a resonant cavity.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photodetector. Background technique [0002] Absorbers are used in a wide range of applications from visible to radio frequencies. Conventional optical absorbers are based on a Fabry-Perot (FP) cavity whose medium is surrounded by mirrors of different reflectivity. Although this absorber has been used in photodetection and other light-emitting devices that require strong light-matter interaction, it requires the thickness of the Fabry-Perot cavity must be greater than λ / 4n (λ is the wavelength of the incident light, n is reflection coefficient of the medium). Therefore, in view of the current rapid development of integrated optics, such thicker devices can no longer meet the requirements for device thickness. [0003] Since metamaterial-based absorbers were reported in 2008, ultrathin absorbers based on metamaterials and metasurfaces have been extensively studied. Ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/032H01L31/0216H01L31/18
CPCH01L31/02161H01L31/032H01L31/1085H01L31/18Y02P70/50
Inventor 王志明杜文巫江余鹏李彩虹刘和桩邹吉华徐浩马翠苹
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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