Interconnect layer contact and method for improved packaged integrated circuit reliability
A technology of photoelectric sensors and integrated circuits, applied in circuits, electric solid-state devices, electrical components, etc., can solve problems such as hindering current flow
Pending Publication Date: 2019-10-08
OMNIVISION TECH INC
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- Application Information
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Problems solved by technology
Cracks may propagate due to metal migration and may eventually block current flow
Method used
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[0013] in such as figure 2 In the illustrated improved bonding pad structure 200 for a photosensor array integrated circuit, a via 202 is etched through a semiconductor substrate 204 and an interlayer dielectric 205 to expose a thin first metal layer 206, the thin The first metal layer 206 typically has copper and silicon doped aluminum. Transistors, such as the transistors of the decoders of the photosensor array, are formed in the semiconductor substrate. The interlayer dielectric 205 can be silicon dioxide or a low capacitance dielectric material. The back of the wafer and the sidewalls of the via 202 are lined with an insulator 208 , which may be silicon dioxide or another dielectric material; the liner is removed from the central region of the via to re-expose the first metal layer 206 .
[0014] Before depositing the interconnect metal layer 210, a conductive plug 220 is deposited on the exposed first metal 206. A barrier is formed between the interlayer metal 210 an...
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Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at theopenings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.
Description
technical field [0001] The present application relates to a method and photosensor integrated circuit for forming a packaged photosensor array. Background technique [0002] Interconnect layers are required to adapt the integrated circuit bonding layout to match the bonding locations of certain integrated circuit packages, especially when solder ball bonding is used. The interconnection layer connects the bond pads (or pads) of the integrated circuit to the bond pads for solder ball bonding. These solder ball bonds in turn connect the integrated circuit to the connection points of the integrated circuit package. [0003] The topside metal of the bond pads of integrated circuits typically has a thick metal that resists mechanical damage from mechanical stress, including stress caused by temperature changes, bonding processes, or vibration. Other parts of the integrated circuit, including the metal layers below the bond pads, typically have thinner metal layers that are less...
Claims
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IPC IPC(8): H01L21/768H01L23/522H01L23/528H01L23/538
CPCH01L23/5226H01L23/5283H01L21/76831H01L21/76832H01L23/5385H01L23/5386H01L27/14634H01L27/1469H01L27/14636H01L2224/08145H01L2224/16145H01L2224/06181H01L2224/0401H01L2224/05548H01L2224/02371H01L2224/02372H01L2224/05567H01L2924/3512H01L2924/351H01L2224/81815H01L2224/16227H01L2224/03464H01L24/05H01L24/13H01L24/06H01L24/16H01L24/81H01L2224/05147H01L2224/05124H01L2224/05155H01L2224/05144H01L2224/05666H01L2224/05647H01L2224/05655H01L2224/13111H01L2224/13139H01L2224/13147H01L21/76898H01L23/481H01L2924/00014H01L2924/013H01L2924/01014H01L2924/01079H01L2924/01028H01L2924/01029H01L2924/01022H01L2924/014H01L2924/01082H01L2924/01047H01L2924/0105H01L24/03H01L21/76897H01L24/11H01L23/528H01L23/53228H01L23/53209H01L21/288H01L21/32139H01L27/1464H01L2224/13024H01L2224/0231H01L2224/0239H01L2224/05573H01L2224/05569H01L2224/03452H01L2224/05166H01L2224/13116H01L27/14643
Inventor 钱胤缪佳君张明戴幸志
Owner OMNIVISION TECH INC