A method of making a Schottky

Abstract

The present invention provides a Schottky manufacturing method, comprising the following steps: S1: depositing a layer of dielectric film on a substrate material; S2: field confinement ring photolithography and ion implantation; S3: field confinement ring area etching Etching; S4: Dielectric film stripping; S5: Metal layer deposition; S6: Metal lithography and etching. The beneficial effect of the present invention is that the field limiting ring area is etched, compared with the existing preparation process, one lithography is reduced in the process flow, the productivity is improved, the production cost is reduced, and the occupied time of the lithography machine of the manufacturing bottleneck equipment is solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a Schottky manufacturing method. Background technique [0002] At present, the terminal structure of common Schottky devices is mostly the structure of field plate plus field limiting ring (single or multiple field limiting rings). The terminal structure does not contribute to the forward conduction of the device. At the same time, the Schottky of this structure The device processing process is generally a three-layer lithography structure, mainly including field limit ring lithography, dielectric layer aperture lithography, and metal layer lithography. Device manufacturing requires 3 times of lithography, which takes up the time of key equipment lithography machine. , limiting the output of the production line; the processing cost of the three-step lithography manufacturing is high, which affects the profitability of the product. SUMMARY OF THE INVENT...

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Problems solved by technology

[0002] At present, the terminal structure of common Schottky devices is mostly the structure of field plate and field limiting ring (single or multiple field limiting rings). The terminal structure does not contribute to the forward conduction of the device. At the same time, the Schottky of this structure The device processing process is generally a three-layer lithography structure, mainly including field-limiting ring lithography, dielectric layer opening lithography, and metal layer lithography. Device manufacturing requires 3 lithography, which takes up the machine time of the key equipment lithography machine. , to limit the output of the production line; the processing cost of the third lithography manufacturing is relatively high, which affects the profitability of the product

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