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QLED display screen and preparation method

一种显示屏、漏极的技术,应用在半导体/固态器件制造、电气元件、电固体器件等方向,能够解决镀舱尺寸难以制备大尺寸QLED显示屏、难以制备大尺寸QLED显示屏、操作工艺繁琐复杂等问题,达到避免真空蒸镀制程的使用、实现全印刷工艺制备、降低制造成本的效果

Active Publication Date: 2019-10-22
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a QLED, which aims to solve the problem that the anode of the existing QLED cannot be prepared by solution processing method, which leads to high equipment requirements, material waste, high cost and limited by the size of the plating chamber, making it difficult to prepare a large QLED. The problem with small QLED displays
[0007] Another object of the present invention is to provide a QLED display, which aims to solve the problem that the existing QLED display adopts conductive metal oxide ITO as the bottom electrode, which leads to the complicated and complicated operation process, and at the same time solves the problems of QLED in the existing QLED display. The anode cannot be prepared by a solution processing method, which leads to high equipment requirements for preparing the QLED, waste of materials, high cost, and limited by the size of the plating chamber, it is difficult to prepare a large-size QLED display.

Method used

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  • QLED display screen and preparation method
  • QLED display screen and preparation method
  • QLED display screen and preparation method

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Embodiment Construction

[0034] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0035] combine Figure 1-2 , an embodiment of the present invention provides a QLED1, including an anode 11, a quantum dot light-emitting layer 14 and a cathode 16 that are stacked in sequence, such as figure 1 As shown, the material of the anode 11 is a polymer with conductivity >0.1S, and the material of the cathode 16 is a micron or nanometer conductive material paste.

[0036] In order to improve the charge transport function, as a preferred embodiment, the QLED1 further includes at least one of a hole injection layer 12 , a hole transport layer 13 , an el...

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Abstract

The invention provides a QLED display screen and a preparation method. The QLED display screen comprises a TFT back plate, a pixel defining layer and a QLED. The TFT back plate comprises a substrate body, a TFT array arranged on the substrate body and a passivation layer / flat layer covering the TFT array. The TFT array comprises a drain electrode. A pit position is arranged on the drain electrodeof the passivation layer / flat layer. Part or all of the drain electrode is exposed out of the pit position. The pixel defining layer is correspondingly provided with a sub-pixel above the pit. An opening of the sub-pixel is larger than the opening of the pit. The QLED is arranged in the sub-pixel and comprises an anode, a quantum dot light-emitting layer and a cathode which are sequentially arranged in a stacked mode. The anode is made of polymers with the conductivity larger than 0.1 S. The cathode is made of micron-scale or nano-scale conductive material mucilage. The pit is filled with thepolymer materials of the anode so that the anode can be connected with the drain.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diodes, and in particular relates to a QLED display screen and a preparation method. Background technique [0002] Quantum dot (QD for short) is a kind of nanoparticle composed of Ⅱ-Ⅵ group, Ⅲ-Ⅴ or Ⅳ-Ⅵ group element, which can emit light after being excited. The emission wavelength of quantum dots is related to the size of quantum dot particles, so by controlling the size of quantum dots, visible light of various ideal wavelengths can be generated. In addition, quantum dot luminescent materials have the advantages of high light color purity, high luminescence quantum efficiency, and long service life, and are very promising electroluminescent materials. Quantum dot-based electroluminescence display (QLED) is similar to organic electroluminescence display (OLED) in that it adopts a sandwich-like stack structure, which usually includes an anode, a hole injection layer, a hole transport lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32H01L51/50H01L51/52H01L51/56
CPCH01L33/005H01L33/06H01L33/40
Inventor 陈亚文闫晓林
Owner TCL CORPORATION
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