Nitride thin-film solar cell

A solar cell and nitride technology, applied in the field of optical materials, can solve problems such as lattice mismatch, and achieve the effect of simplifying the process

Pending Publication Date: 2019-10-22
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, although In x Ga 1-x The absorption coefficient of N alloy material is very high, making In x Ga 1-x N alloys can absorb most of the sunlight at a thickness of severa

Method used

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Embodiment 1

[0039] Such as figure 2 As shown, a specific embodiment of the present invention is a nitride thin film solar cell, comprising:

[0040] A substrate 1. The substrate 1 is a square sapphire substrate with a thickness of 600 μm and a side length of 100 mm. The front side of the substrate is in the direction of the c-plane (001). Before the growth of the epitaxial film, the sapphire substrate is subjected to grinding, polishing, and cleaning processes, and the surface condition meets the requirements for the growth of the nitride epitaxial layer. The non-doped layer, Bragg reflector (DBR), n-type doped layer, non-doped multiple quantum well layer and p-type doped layer are arranged in sequence from bottom to top on the substrate, and the above layers are deposited in the same vapor deposition equipment Ingrown.

[0041] The non-doped layer also includes a nucleation layer 2, the nucleation layer 2 is fabricated on the sapphire substrate, the non-doped layer 3 is fabricated on ...

Embodiment 2

[0052] structured as figure 2 As shown, another specific embodiment of the present invention is a nitride thin film solar cell, comprising:

[0053] A substrate 1, the substrate 1 is a square 4H-SiC substrate with a thickness of 600 μm and a side length of 100 mm, and the front side of the substrate is in the c-plane (001) direction. Before the growth of the epitaxial film, the 4H-SiC substrate was processed by grinding, polishing and cleaning, and the surface condition met the requirements for the growth of the nitride epitaxial layer.

[0054] A non-doped layer 3, the non-doped layer 3 adopts a high-temperature GaN layer with a thickness of 1.5 μm, the high-temperature GaN layer is prepared by metal-organic chemical vapor deposition (MOCVD) equipment, and the growth temperature of the high-temperature GaN layer is 1080 °C, the growth pressure is 200 Torr.

[0055] Preferably, the non-doped layer also includes a nucleation layer 2, the nucleation layer 2 adopts a low-tempe...

Embodiment 3

[0065] A nitride thin film solar cell, comprising:

[0066] A substrate 1. The substrate 1 is a square sapphire substrate with a thickness of 600 μm and a side length of 100 mm. The front side of the substrate is in the direction of the c-plane (001). The non-doped layer, Bragg reflector (DBR), n-type doped layer, non-doped multi-quantum well layer and p-type doped layer arranged sequentially from bottom to top on the substrate are grown in the same vapor deposition equipment.

[0067] The non-doped layer 3 also includes a nucleation layer 2, which is made on a sapphire substrate, and the nucleation layer 2 is a low-temperature Al with a thickness of 25 nm. 0.1 Ga 0.9 N layer, nucleation layer can also use Al 0.1 Ga 0.85 In 0.05 N, Ga 0.85 In 0.15 N and other film layers, nucleation layer 2 growth using metal organic chemical vapor deposition (MOCVD) equipment, low temperature Al 0.1 Ga 0.9 The growth temperature of the N layer is 500-7000°C, and the growth pressure is...

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Abstract

The invention provides a nitride thin-film solar cell. The nitride thin-film solar cell comprises a substrate, an undoped layer, a Bragg reflector, an n-type doped layer, an undoped multi-quantum welllayer and a p-type doped layer. The substrate is provided with the undoped layer, the Bragg reflector, the n-type doped layer, the undoped multi-quantum well layer and the p-type doped layer from bottom to top, wherein the edge region of the n-type doped layer is a table surface, an n-type ohmic electrode is arranged on the table surface, and the p-type ohmic electrode is arranged on the p-type doped layer. The DBR structure adopted by the invention has the characteristic of the adjustable high-reflectivity wave band. The position of the high-reflectivity wave band is adjusted by adjusting the nitride components, the thickness and the periodicity of a high-refractive-index layer and a low-refractive-index layer in the DBR structure, so that the high-reflectivity wave band and a battery spectral response curve are consistent and coordinated; that is, the high-reflectivity wave band is adjusted to a position consistent with the band where the solar cell is at high quantum efficiency. Inthis manner, the efficiency of the device may be maximized.

Description

technical field [0001] The invention belongs to the field of optical materials, and in particular relates to a nitride thin film solar cell. Background technique [0002] Solar energy is a clean and easily accessible renewable energy that has received widespread attention, attention and favor all over the world. Solar cells are the main means for humans to utilize solar energy, and their basic structure is a semiconductor optoelectronic device with a p-n junction. According to different materials, common solar cells can be divided into silicon (monocrystalline silicon, polycrystalline silicon and amorphous silicon), gallium arsenide, copper indium gallium selenide (CIGS), cadmium telluride, cadmium sulfide, perovskite, organic and other types. No matter which material is used, higher conversion efficiency has always been an important performance goal for the development of the solar cell industry. [0003] In recent years, indium gallium nitride (In x Ga 1-x N,0≤x≤1), i...

Claims

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Application Information

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IPC IPC(8): H01L31/056H01L31/0352H01L31/0445
CPCH01L31/035236H01L31/0445H01L31/056H01L31/0352Y02E10/52
Inventor 马亮
Owner 紫石能源有限公司
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