Wafer separation method

A separation method and wafer technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problem of high cost of laser cutting, prevent the metal layer from lifting, reduce production costs, and ensure production quality Effect

Inactive Publication Date: 2019-10-25
苏州长瑞光电有限公司
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Problems solved by technology

Although the above solutions can better solve this problem, due to the high implementation

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Example Embodiment

[0024] like figure 1 As shown, the wafer 1 targeted by the present invention is composed of a wafer substrate 101 and an upper circuit layer 102. A series of dicing tracks 103 are arranged in the circuit layer 102, and the dicing tracks 103 include metal layers or / and low - k layers, these scribe lines 103 separate the entire wafer 1 into a plurality of chips 104 .

[0025] If the dicing road 103 is cut by mechanical cutting, problems such as lifting of the metal layer, chipping and / or peeling of the low-k layer, cracks, etc. will occur due to the metal layer or / and the low-k layer contained in the dicing road 103 , affecting the performance and reliability of the chip, and greatly reducing the yield of the chip. The existing solutions are laser cutting or a combination of laser cutting and mechanical cutting, and no matter which solution is inseparable from the use of laser cutting equipment, resulting in higher production costs.

[0026] In view of this problem, the soluti...

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Abstract

The invention discloses a wafer separation method, which is used for separating a wafer into a plurality of independent chips according to cutting channels arranged on a wafer circuit layer, wherein the cutting channel includes a metal layer and/or a low-k layer. The wafer separation method includes the steps of firstly attaching layer of transparent protective film to the surface of the wafer circuit layer; and then separating the wafer into a plurality of independent chips according to the cutting channels by using a mechanical cutting method. According to the invention, the problems of tilting and corner collapse of the metal layer and/or stripping and cracking of the low-k layer and the like in the cutting channels during the mechanical cutting process are effectively prevented throughsimply attaching a layer of transparent protective film to the surface of the wafer circuit layer, so that the wafer separation scheme of full mechanical cutting can be realized, and the production cost is effectively reduced while the production quality is ensured.

Description

technical field [0001] The invention relates to a wafer separation method, which belongs to the technical field of semiconductor device manufacturing. Background technique [0002] In the manufacturing process of semiconductor devices, since many chips are usually prepared on a wafer, it is usually necessary to separate the wafer into multiple independent chips according to the dicing lines provided on the circuit layer of the wafer. Existing separation methods include mechanical cutting and thermal cutting. Mechanical cutting uses a cutting knife (usually a diamond knife) for cutting, and thermal cutting uses a laser for cutting. [0003] With the development of semiconductor integrated circuit technology, more and more new technologies are applied, such as High-K (high dielectric constant) metal gate process and low-k (low dielectric constant) process. Although the adoption of this new process can greatly improve the performance of semiconductor devices, it also brings ne...

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Application Information

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IPC IPC(8): H01L21/78H01L21/683
CPCH01L21/6835H01L21/78H01L2221/68327
Inventor 王鹤龙王国杰
Owner 苏州长瑞光电有限公司
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