Novel reversible additive-fragment transfer (RAFT) reagent based on black phosphorus and preparation method and application thereof

Abstract

The invention belongs to a method for preparing a novel reversible additive-fragment transfer (RAFT) reagent based on black phosphorus, and the method includes the steps that a RAFT reagent containingcarboxyl groups in molecules is grafted onto BP nano sheets by covalent modification, and the RAFT reagent based on black phosphorus is obtained. The preparation method is applicable to various RAFTreagents with carboxyl groups in the molecules and can be effectively applied to a series of RAFT polymerized monomers, a platform for the modification of black phosphorus nano sheets is provided; meanwhile the polymer modified black phosphorus nano sheet material by the material in the preparation method has outstanding solubility and charge transfer properties compared with pure black phosphorusnano sheets, so that the polymer modified black phosphorus nano sheet material has a wide application prospect in photoelectric devices. The preparation method is applicable to the RAFT reagents containing carboxyl groups in molecules such as s-1-dodecyl-s'-(a,a'-dimethyl-a''-acetoxy) tristhiocarbonate (DDAT), 4-cyano-4-[(dodecyl thiocarbonyl) thioalkyl]valeric acid, 4-cyano-4-(phenylthioformyl)valeric acid, S-(thiobenzoyl) thioacetic acid.

Description

technical field [0001] The invention belongs to the technical field of the preparation of black phosphorus materials and the covalent grafting of RAFT polymerization initiators through covalent modification, so as to more conveniently carry out polymerization modification on the surface of black phosphorus nanosheets. Phosphorus nanosheets can be modified by covalent grafting of RAFT reagents and black phosphorus nanosheets. Background technique [0002] In the past decade, breakthroughs have been made in the development of two-dimensional materials. This type of material with a thickness of only one or a few layers of atoms has become an important tool for exploring fundamental quantum physics due to its extremely small thickness and weak interlayer interactions. As well as excellent materials for exploring the size effect of semiconductor materials. The two-dimensional materials that have received the most attention are graphene and transition metal dichalcogenides. Graph...

AI Technical Summary

Problems solved by technology

Most transition metal dichalcogenides are semiconductors with large band gaps (>1.5eV), such as molybdenum disulfide and tungsten disulfide, which have weak charge transfer ability and poor Fermi level matching at the semiconductor-metal interface. limit their practical application

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