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High-sensitive MEMS tactile sensor structure

A tactile sensor, high-sensitivity technology, applied in the direction of instruments, measuring devices, measuring force, etc., can solve the problems of poor sensor sensitivity, inapplicability, sensing signal offset, etc., to achieve high sensitivity, expand the sensing range, and transmit sensitive effect

Active Publication Date: 2019-11-05
HANGZHOU DIANZI UNIV
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Problems solved by technology

However, the sensitivity of the proposed sensor is not very good, which limits the application scenarios of the sensor and cannot be used in fields that require precise measurement, and when the capacitor unit is saturated, when the two electrodes of the capacitor are attached together, the gap between the two electrodes The electrostatic force may cause the sensing signal to shift

Method used

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  • High-sensitive MEMS tactile sensor structure

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Embodiment Construction

[0017] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0018] exist figure 1 , shows the structural cross-sectional schematic diagram of the tactile sensor, as shown in the figure, the sensor structure is divided into five parts:

[0019] The first part is the capacitive sensing unit, which is composed of two deformable films, and the metal is embedded in the deformable film to form the two electrodes of the capacitor, and the upper electrode 1.1 has an inner protrusion 1.3, and the position of the inner protrusion is above the supporting beam. When the capacitive sensing unit is saturated, the inner convex structure can reduce the contact area between the upper and lower electrodes, thereby increasing the pressure transmitted from the upper electrode to the lower electrode 1.2, thus increasing the deformation of the piezoresistive beam, thereby Improved sensor sensitivity.

[0020] The second part is the...

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Abstract

The invention discloses a high-sensitive MEMS tactile sensor structure. The high-sensitive MEMS tactile sensor structure comprises a capacitive sensing unit, a support beam, a piezo-resistance sensingunit and a back cavity; the capacitive sensing unit is composed of an upper deformable electrode film and a lower deformable electrode film embedded into the metal, and the internal bulge is furtherarranged below the deformable electrode film at the upper part; one end of the support beam is connected with the deformable electrode film at the lower part of the capacitive sensing unit, and the other end is connected with the piezo-resistance sensing unit, thereby communicating two sensing units; the piezo-resistance sensing unit is composed of four pairs of double-deck piezo-resistive beams;and the back cavity is formed by the pit etched on a silicon substrate and used for providing a deformation space for the piezo-resistance sensing unit. After changing the sensing unit structure, theresponse change is more obvious under the same load, the sensor is more sensitive, and the integration of two sensing units is still realized, and the sensing range of the sensor is enlarged.

Description

technical field [0001] The invention relates to the field of tactile sensors, in particular to a structure capable of improving the sensitivity of the tactile sensor. Background technique [0002] Tactile sensors are an important way for robots to perceive the external environment. Tactile perception allows the robot to perceive the tactile information of the surface features of the object without visual information, such as the hardness and roughness of the surface of the object, which is used to better help the robot recognize the object. With the development of science and technology, tactile sensors are widely used in the medical field, robotics and wearable devices. [0003] According to the sensing principle, common tactile sensors mainly include capacitive, piezoresistive, electromagnetic, piezoelectric and optical. Among them, capacitive and piezoresistive are the two most studied tactile sensors. In general, capacitive sensors have high sensitivity and detect rel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14
CPCG01L1/148
Inventor 董林玺刘沙沙
Owner HANGZHOU DIANZI UNIV
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