Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SOG chip pretreatment method, SOG chip transmission method and system and warpage detection device

A technology of detection device and transmission method, applied in transportation and packaging, conveyor objects, electrical components, etc., can solve the problems of unreasonable pretreatment process and low efficiency of SOG sheets, and achieve flexible, targeted, and efficient pretreatment process. The effect of improving work efficiency and equipment capacity

Inactive Publication Date: 2019-11-05
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned deficiencies in the prior art, the present invention provides a SOG sheet pretreatment method, a SOG sheet transmission method and a warpage detection device to solve the problems of unreasonable and low efficiency in the existing SOG sheet pretreatment process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SOG chip pretreatment method, SOG chip transmission method and system and warpage detection device
  • SOG chip pretreatment method, SOG chip transmission method and system and warpage detection device
  • SOG chip pretreatment method, SOG chip transmission method and system and warpage detection device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the present invention. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0048] like figure 1 As shown, the present invention provides a kind of SOG slice pretreatment method, described method comprises the following steps:

[0049] Step 11, the warpage detection device determines the warpage of the SOG sheet to be preheated.

[0050] Specifically, the warpage detection device separately determines the warpage of each SOG sheet to be preheated.

[0051] Step 12, determine the preheating time of the SOG sheet to be preheated according to the relationship betwe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an SOG chip pretreatment method, an SOG chip transmission method, a warpage detection device and an SOG chip transmission system. The preheating time of to-be-preheated SOG chips is determined through determining the warpage of the to-be-preheated SOG chips according to a relation among the warpage, a preset warpage threshold and a preset preheating time threshold. Accordingto the SOG chip pretreatment method, the preheating time of each SOG chip is calculated through calculating the warpage of each SOG chip before pretreatment of each SOG chip, different SOG chips aredifferent in warpage and also are different in corresponding preheating time, and unified preheating time is not set for a plurality of SOG chips, so that the pretreatment process is more flexible andmore specific, and the work efficiency of the system and the equipment productivity can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to an SOG sheet preprocessing method, an SOG sheet transmission method, a system, and a warpage detection device. Background technique [0002] At present, solid-state image sensors have been widely used, and there are two different design structures: CCD (Charge-coupled Device, charge-coupled device) image sensor and CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) image sensor. The CMOS image sensor is mainly composed of a glass layer and a silicon layer, with a chip layer in between. The CMOS image sensor is packaged at the wafer level and completed on a plasma etching machine through TSV (ThroughSilicon Via, through-silicon via) technology. The SOG sheet (Silicon on Glass, silicon glass) composed of CMOS sensors has high requirements on the adsorption capacity of the electrostatic chuck of the etching machine, and the a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/324H01L21/677
CPCH01L21/324H01L21/67098H01L21/67288H01L21/67739
Inventor 王伟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com