Unlock instant, AI-driven research and patent intelligence for your innovation.

Comparison device and cmos image sensor including the same

A technology of comparison device and comparison circuit, which is applied in the direction of solid-state image signal generator, image communication, picture signal generator, etc., can solve the problem of system performance degradation and achieve the effect of minimizing the impact

Active Publication Date: 2021-10-26
SK HYNIX INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, it is difficult to minimize banding noise simply by adjusting the size of the transistors or the amount of current because changes in operating speed or power can degrade overall system performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Comparison device and cmos image sensor including the same
  • Comparison device and cmos image sensor including the same
  • Comparison device and cmos image sensor including the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Figure 1A is a diagram of a CMOS image sensor used to aid in understanding various embodiments of the disclosed technology, and shows a CMOS image sensor having a column-parallel structure implemented with an example single-slope analog-to-digital converter.

[0023] Such as Figure 1AAs shown, a CMOS image sensor may include a pixel array 10 of imaging pixels arranged in rows and columns to output pixel signals corresponding to input light, a row decoder 20, a ramp signal generator 30, a comparison unit 40, a counting unit 50, a storage unit 60 , a control unit 80 and a column readout circuit 70 .

[0024] Each imaging pixel of the pixel array 10 may be realized by a photodiode, a phototransistor, a photogate, or other photosensitive circuits capable of converting light into a pixel signal (eg, charge, voltage, or current). On top of the imaging pixels, different color filters are arranged to respectively cover the photosensitive pixels to filter the incident light in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A comparison device and a CMOS image sensor including the comparison device. A comparison device capable of minimizing the influence of banding noise by canceling the banding noise and a CMOS image sensor including the same are provided. The comparison device may include: a comparison circuit configured to compare the pixel signal and the ramp signal with each other and output a comparison signal; a stripe noise adjustment circuit coupled to the comparison circuit to adjust an electrical voltage of the comparison circuit. characteristics; a stripe value generation circuit coupled to the stripe noise adjustment circuit to provide the stripe value based on a set code value to the stripe noise adjustment circuit; and a stripe noise reduction circuit coupled to the stripe noise adjustment circuit The stripe noise adjustment circuit, and configured to reduce the stripe noise of the comparison circuit by adjusting the electrical characteristic value of the comparison circuit.

Description

technical field [0001] The techniques and implementations disclosed in this patent document relate to analog-to-digital conversion devices and complementary metal-oxide-semiconductor (CMOS) image sensors (CIS). Background technique [0002] When designing a CMOS image sensor (CIS), there is a trade-off between operating speed and power consumption. Therefore, current CMOS image sensor technology uses a column-parallel analog-to-digital converter (ADC) architecture to reduce power consumption while increasing operating speed. However, the readout circuit with column-parallel ADC architecture needs to be highly integrated to match the small size of the photo-sensing pixels, which is why single-slope ADCs with simple structures are mainly used. [0003] However, in a CMOS image sensor with a column-parallel architecture, adjacent ADCs cannot be separated far enough to prevent interference due to the small pixel size, so coupling may occur between adjacent ADCs noise. [0004...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/357H04N5/374
CPCH04N25/76H04N25/677H04N25/78H04N25/617H01L27/14645H04N25/772H04N23/10H04N25/60H04N25/75H04N25/745
Inventor 金贤俊金兑勋朴炫默
Owner SK HYNIX INC