Thin Film Transistor Array Substrate

Abstract

The present invention proposes a thin film transistor array substrate, comprising: a substrate, a gate, a gate insulating layer, an active layer, an ohmic contact layer, a source / drain, a pixel electrode and a passivation layer arranged in sequence, and it is characterized in that the The gate and the source / drain have a double-layer structure, and the double-layer structure includes a molybdenum-containing molybdenum ternary alloy barrier layer and a copper electrode layer. The double-layer structure solves the problem of undercutting and hollowing out of the metal layer in the thin film transistor array substrate, thereby improving the yield rate of products.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate. Background technique [0002] With the advancement of information technology, display screens have gradually developed in the direction of high quality and high functionality. The more functions of the display screen, the higher the picture quality, the more thin film transistors (thin film transistor, TFT) required, the more complex the circuit above the thin film transistor array substrate, and the longer the metal wires for electrical connection , resulting in signal delay. In the manufacturing process of large-scale display panels, the copper process has been used to replace the aluminum process for the metal wire process used for electrical connection in the thin film transistor array substrate, because copper has better conductivity and lower impedance. [0003] Usually, a barrier layer with metal components is coated between the c...

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Problems solved by technology

However, molybdenum is easily corroded in alkaline photoresist stripping solution, thus forming undercut and causing subsequent hollowing out of copper

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