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X-ray fluorescent screen with vertical channel structure

A vertical channel and micro-channel structure technology, applied in the direction of cathode ray tube/electron beam tube, discharge tube, electrical components, etc., can solve the problem of high price, achieve the effect of achieving collimation and preventing the harm caused by crosstalk

Inactive Publication Date: 2019-11-22
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common digital imaging panel in the market is not only very expensive, but also due to its internal coupling relationship, sneak currents will form between nearby units, which will cause crosstalk to normal working units. This phenomenon will occur with the change of X-ray dose Change
Existing products have not overcome this problem

Method used

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  • X-ray fluorescent screen with vertical channel structure
  • X-ray fluorescent screen with vertical channel structure

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Embodiment Construction

[0016] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0017] Such as figure 1 and figure 2 As shown, there is an X-ray fluorescent screen with a vertical channel structure, which includes: a silicon wafer uniformly distributed in a vertical microchannel 1, a metal reflective film 2, a scintillation film 3 and a photoelectric conversion layer 4; the inner wall of the vertical microchannel 1 is provided with Metal reflective film 2 and scintillation film 3, the photoelectric conversion layer 4 is arranged at the bottom of the silicon wafer; X-rays enter the X-ray fluorescent screen with a vertical microchannel 1 structure, emit weak visible light after being absorbed by the scintillation film 3, and pass through the metal The reflective film 2 reflects, is absorbed by the photoelectric conversion layer 4, and converts visible light into an electrical signal and outputs it.

[0018] In this embod...

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Abstract

The invention relates to an X-ray fluorescent screen with a vertical channel structure and relates to the field of X-ray detection. The influence of ray crosstalk on imaging is avoided through the design of the internal structure of the fluorescent screen, thereby improving the detection performance of X-rays. The fluorescent screen comprises a silicon wafer, metal reflecting films, scintillationfilms and a photoelectric conversion layer, wherein vertical micro-channels are uniformly distributed on the silicon wafer; the metal reflecting films and the scintillation films are sequentially arranged on the inner walls of the vertical micro-channels; and the photoelectric conversion layer is arranged at the bottom of the silicon wafer. X-rays enter the X-ray fluorescent screen with a verticalmicro-channel structure, are absorbed and converted into weak visible light through the scintillation films, and then are reflected through the metal reflecting films, so that the visible light passes through the photoelectric conversion layer, the photoelectric conversion layer converts the visible light into an electric signal, and an image is output. Certain x-rays are absorbed, and the influence of crosstalk on imaging is prevented; and photoelectric conversion of X-rays is realized. The structure can realize collimation of x-rays, absorb a small amount of rays and prevent harms caused bycrosstalk.

Description

technical field [0001] The invention relates to the field of X-ray detection, in particular to an X-ray fluorescent screen with a vertical channel structure. Background technique [0002] In recent years, X-ray detection has been widely used in various fields, for example, X-ray detection plays an important role in industrial non-destructive testing, safety inspection, medical imaging equipment, etc. And with the continuous development of photoelectric conversion devices, various digital detectors emerge in an endless stream, making these applications more convenient. X-ray detectors are divided into two categories: direct type and indirect type. Direct detectors can directly absorb X-rays and convert them into electrical signals; while indirect detectors use a layer of scintillation material to convert X-rays into visible light signals, and then use photoelectric conversion devices to convert visible light into electrical signals. Direct detectors have disadvantages such ...

Claims

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Application Information

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IPC IPC(8): H01J29/28H01J29/30
CPCH01J29/28H01J29/30
Inventor 秦旭磊金唯一李野
Owner CHANGCHUN UNIV OF SCI & TECH