Cascade enhanced GaN HEMT power module encapsulation structure and encapsulation method

Abstract

The present invention relates to a cascade enhanced GaN HEMT power module encapsulation structure. The cascade enhanced GaN HEMT power module encapsulation structure includes an encapsulation housing,a metal lead frame and pins; the inside of the encapsulation housing further includes a first cascade enhanced GaN HEMT device, a second cascade enhanced GaN HEMT device, a third cascade enhanced GaNHEMT device, a fourth cascade enhanced GaN HEMT device, and a full-bridge grid drive circuit; and each cascade enhanced GaN HEMT device includes a high-voltage depletion mode transistor, a low-voltage enhancement mode transistor, a voltage adjustment circuit, a substrate island, a first conductive substrate, a second conductive substrate and a third conductive substrate. According to a module provided by the present invention, by minimizing a length of a binding wire, the optimization of parasitic inductance is implemented; and in addition, the voltage adjustment circuit is further increased,the high-voltage depletion mode GaN device inside the module is guaranteed to work in a security zone state.

Description

technical field [0001] The invention relates to a cascaded enhanced GaN HEMT power module integrated packaging structure and packaging method, belonging to the technical field of power electronics. Background technique [0002] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the emergence and popularization of super-junction MOSFETs and insulated gate bipolar transistors (IGBTs),...

AI Technical Summary

Problems solved by technology

and for Figure 1a For the high-voltage depletion-mode transistor 10 mentioned above, the absolute value of the gate-source voltage Vgs10︱-Vds11︱ under the cut-off condition is much greater than 0, and for different application systems, the absolute value︱-Vds11︱ is not a fixed voltage, it must be severely restricted Figure 1a Overall reliability of cascaded enhancement mode GaN HEMT devices shown

Images