Low-parasitic-inductance high-reliability cascade enhanced GaN full-bridge power module

Abstract

The invention belongs to the technical field of power electronics, and specifically relates to a low-parasitic-inductance high-reliability cascade enhanced GaN full-bridge power module. The GaN full-bridge power module comprises a first cascade enhanced GaN HEMT device 351, a second cascade enhanced GaN HEMT device 352, a third cascade enhanced GaN HEMT device 353, a fourth cascade enhanced GaN HEMT device 354 and a full-bridge gate driving circuit 350. Any cascade enhanced GaN HEMT device in the module provided by the invention realizes optimization of the parasitic inductance by minimizing the length of a binding wire. In addition, a voltage adjusting circuit is additionally arranged, it is guaranteed that a high-voltage depletion type GaN device inside the GaN full-bridge power module works in a safe region state, and the reliability of the module is further improved.

Description

technical field [0001] The invention relates to a low parasitic inductance and high reliability cascaded enhanced GaN full-bridge power module, which belongs to the technical field of power electronics. [0002] technical background [0003] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the emergence and popularization of super-junction MOSFETs and insulated gate bipolar transis...

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Problems solved by technology

and for Figure 1a For the high-voltage depletion-mode transistor 10 mentioned above, the absolute value of the gate-source voltage Vgs10︱-Vds11︱ under the cut-off condition is much greater than 0, and for different application systems, the absolute value︱-Vds11︱ is not a fixed voltage, it must be severely restricted Figure 1a Overall reliability of cascaded enhancement mode GaN HEMT devices shown

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